Sputter Deposition Processes

Westwood, W. D.

doi:10.1557/s0883769400063697

Cited by 76 publications

(85 citation statements)

References 23 publications

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“…In Fig. 2.4 we show data which represent an extrapolation to high pressures of data published by Westwood [11]. The data provide a hint for the sputtering gas pressures needed to thermalize energetic particles within a given distance which for our problern is the distance between the target and the film surface.…”

Section: The 3-step and The 2-step Preparation Proceduresmentioning

confidence: 80%

“…2.2c shows the presumably mostsimple solution of the HTSC deposition problem, the sputtering from a single target which contains all the elements needed in a film. As pointed out in many publications [11] sputtering from an alloy or compound target results (after a short period of presputtering for "conditioning" of the target surface) in a flux of sputtered material which contains the elements in the same ratio as the bulk of the target. The target then in principle can be manufactured from an alloy of the metallic constituents, e.g.…”

Section: The 3-step and The 2-step Preparation Proceduresmentioning

confidence: 99%

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Epitaxial growth and properties of YBaCuO thin films

Geerk

Linker

Meyer

1989

Materials Science Reports

180

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The growth quality ofYBaCuO thin films deposited by sputtering on different substrates (AlzOs, MgO, SrTiOs, Zr(Y)Oz) has been studied by X-ray diffraction and channeling experiments as a function ofthe deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films ofup to 5.5 x 106 AJcm2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing threedimensional superconducting behaviour. Films on (100) SrTiOs of9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Baz Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16m V and ±30m V.Epitaktisches Wachsturn und Eigenschaften dünner Schichten des Hochtemperatur-Supraleiters YBaCuO ZUSAMMENFASSUNG Das Verfahren der Magnetron-Kathodenzerstäubung wurde zur Abscheidung dünner YBaCuO-Schichten auf verschiedenen Substraten (AlzOs, MgO, SrTiOs, Zr(Y)Oz) optimiert. Die Wachstumsrichtung und die kristalline Güte der Schichten wurde in Abhängigkeit von der Substrat-Oberflächengüte, der Orientierung und der Temperatur mittels Ionenchanneling und Röntgendiffraktion untersucht. Der Grad der Epitaxie und die Mosaik-Verbreiterung bestimmen den kritischen Transportstrom mit Werten bis zu 5.5 ·106 Ä/cm2 bei 77 K. Selbst in ultradünnen Schichten mit einer minimalen Dicke von bis zu 2 nm zeigt das supraleitende Verhalten 3-dimensionalen Charakter. Schichten auf (100) SrTiOs mit Dicken kleiner etwa 9 nm sind teilweise zur Unterlage verspannt, was auf kommensurables Wachstum hinweist. Die Channeling-Analyse der Schichtoberfläche ergibt in günstigen Fällen eine Verlagerung von nur 1 Ba-Atom pro Baz YKette, was einer maximalen Dicke der gestörten Oberfläche von etwa 0.6 nm entspricht. Auf diesen Schichten präparierte Tunneldioden zeigen Strukturen mit einer Energielücke inderNähe von ±16m V und ±30m V.--I --

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Section: The 3-step and The 2-step Preparation Proceduresmentioning

confidence: 80%

Section: The 3-step and The 2-step Preparation Proceduresmentioning

confidence: 99%

Epitaxial growth and properties of YBaCuO thin films

Geerk

Linker

Meyer

1989

Materials Science Reports

180

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“…As such, these external sources of ions will not be covered in this chapter. A good overview can be found in [10]. Another source of ions is a plasma.…”

Section: ( )mentioning

confidence: 99%

“…Then, a basic system design is described. It should be noted that in this chapter we exclude ion beam sources, which have been well reviewed in the literature [10], due to limitations associated with scalability and power supply options. In the following sections several discharge sputter deposition configurations are discussed.…”

Section: Introduction: How Popular Is Sputter Deposition ?mentioning

confidence: 99%

Sputter Deposition Processes

Depla

Mahieu

Greene

2010

Handbook of Deposition Technologies for Films and Coatings

123

109

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Sputter deposition is a widely used technique to deposit thin films on substrates. The technique is based upon ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e. the sputtering of the target material. Hence, this technique is part of the class of physical vapor deposition techniques, which includes, for example, thermal evaporation and pulsed laser deposition. The most common approach for growing thin films by sputter deposition is the use of a magnetron source in which positive ions present in the plasma of a magnetically enhanced glow discharge bombard the target. This popular technique forms the focus of this chapter. The target can be powered in different ways, ranging from dc for conductive targets, to rf for nonconductive targets, to a variety of different ways of applying current and/or voltage pulses to the target. Since sputtering is a purely physical process, adding chemistry to, for example, deposit a compound layer must be done ad hoc through the addition of a reactive gas to the plasma, i.e. reactive sputtering. The undesirable reaction of the reactive gas with the target material results in a non-linear behavior of the deposition parameters as a function of the reactive gas flow. To model this behavior, the fluxes of the various species towards the target must be determined. However, equally important are the fluxes of species incident at the substrate because they not only influence the reactive sputter deposition process, but also control the growth of the desired film. Indeed, the microstructure of magnetron sputter deposited films is defined by the identity of the particles arriving at the substrate, their fluxes and the energy per particle.

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“…While industrially this class of materials is often deposited from compound targets, for research purposes co-deposition using two metallic sources in an Ar-O 2 ambient is frequently chosen to increase the flexibility with respect to the chemical compositions that can be accessed. [7][8][9] This combinatorial approach has been extensively used to study the effect of multiple targets on the deposition process characteristics and to investigate the effect of the chemical composition on microstructure, phase formation and properties of various multicomponent films. [9][10][11][12][13][14][15] In such multi-source combinatorial approaches the substrate and target normal are not parallel with respect to each other, i.e., offnormal deposition is performed.…”

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confidence: 99%