Texture and microstructure in co-sputtered Mg-M-O (M = Mg, Al, Cr, Ti, Zr, and Y) films

Saraiva, Marta Martins; Depla, Diederik

doi:10.1063/1.4718431

Cited by 15 publications

(12 citation statements)

References 33 publications

(31 reference statements)

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“…The resulting tilt angle of the columns depends on the incidence angle of the vapor flux, but it can also be altered by changing film composition [34], spatial distribution of the vapor flux [35][36][37] or the kinetic growth conditions [38][39][40][41][42]. Yet another way to affect the column tilt is to use highly ionized vapor fluxes, as previously has been shown in e.g., Ref.…”

Section: (B)mentioning

confidence: 89%

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

Elofsson¹

2014

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Microstructure and morphology of thin films are decisive for many of their resulting properties. To be able to tailor these properties, and thus the film functionality, a fundamental understanding of thin film growth needs to be acquired. Film growth is commonly performed using continuous vapor fluxes with low energy, but additional handles to control growth can be obtained by instead using pulsed and energetic ion fluxes. In this licentiate thesis the physical processes that determine microstructure and morphology of thin films grown using pulsed and highly ionized vapor fluxes are investigated.The underlying physics that determines the initial film growth stages (i.e., island nucleation, island growth and island coalescence) and how they can be manipulated individually when using pulsed vapor fluxes have previously been investigated. Their combined effect on film growth is, however, paramount to tailor film properties. In the thesis, a route to generate pulsed vapor fluxes using the vapor-based technique high power impulse magnetron sputtering (HiPIMS) is established. These fluxes are then used to grow Ag films on SiO 2 substrates. For fluxes with constant energy and deposition rate per pulse it is demonstrated that the growth evolution is solely determined by the characteristics of the vapor flux, as set by the pulsing frequency, and the average time required for coalescence to be completed.Highly ionized vapor fluxes have previously been used to manipulate film growth when deposition is performed both normal and off-normal to the substrate. For the latter case, the physical mechanisms that determine film microstructure and morphology are, however, not fully understood. Here it is iii iv shown that the tilted columnar microstructure obtained during off-normal film growth is positioned closer to the substrate normal as the ionization degree of the flux increases, but only if certain nucleation characteristics are present.

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Section: (B)mentioning

confidence: 89%

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

Elofsson¹

2014

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“…The constituent columns are bent or shows a clear tilt. As shown in previous studies for Mg(M ¼ Al, Cr, Mg, Ti, Y, Zr)O [1] and YSZ (yttria-stabilized zirconia) thin films [2e4], the tilt is defined by a difference in composition over the column width. The column side exposed to target A (Mg or Zr) has a higher concentration for element A as compared to the opposite column side which is more abundant for element B (Al, Cr, Mg, Ti, Y, Zr in the case of Mg(M)O thin films, or Y in the case of YSZ).…”

mentioning

confidence: 99%

The influence of the pressure on the microstructure of yttria-stabilized zirconia thin films deposited by dual magnetron sputtering

Depla

Besnard

Lamas

2016

Vacuum

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“…6 Control of column tilt and separation is a prerequisite for tailoring the properties and the functionality in offnormally deposited films. 1 Variation of the composition 7 or the spatial distribution of the deposited material, e.g., by employing more than one material source 8,9 or by varying the deposition pressure, 10 can influence the degree of column tilt. The latter may also be affected by changing the surface mobility of the film forming species, e.g., by varying the growth temperature 11,12 and the deposition rate.…”

mentioning

confidence: 99%

Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxes

Elofsson

Magnfält

Samuelsson

et al. 2013

Journal of Applied Physics

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The tilt of the columnar microstructure has been studied for Cu and Cr thin films grown offnormally using highly ionized vapor fluxes, generated by the deposition technique high power impulse magnetron sputtering. It is found that the relatively large column tilt (with respect to the substrate normal) observed for Cu films decreases as the ionization degree of the deposition flux increases. On the contrary, Cr columns are found to grow relatively close to the substrate normal and the column tilt is independent from the ionization degree of the vapor flux when films are deposited at room temperature. The Cr column tilt is only found to be influenced by the ionized fluxes when films are grown at elevated temperatures, suggesting that film morphology during the film nucleation stage is also important in affecting column tilt. A phenomenological model that accounts for the effect of atomic shadowing at different nucleation conditions is suggested to explain the results. V C 2013 AIP Publishing LLC. [http://dx

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Texture and microstructure in co-sputtered Mg-M-O (M = Mg, Al, Cr, Ti, Zr, and Y) films

Cited by 15 publications

References 33 publications

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

Thin Film Growth using Pulsed and Highly Ionized Vapor Fluxes

The influence of the pressure on the microstructure of yttria-stabilized zirconia thin films deposited by dual magnetron sputtering

Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxes

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