Sprayed films of stannite Cu2ZnSnS4

Nakayama, Norio; Ito, Kentaro

doi:10.1016/0169-4332(95)00225-1

Cited by 338 publications

(187 citation statements)

References 4 publications

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“…[1][2][3] In addition to these properties, its toxicity is relatively low compared to the compounds containing selenium such as Cu 2 Zn 1−x Cd x Sn(Se 1−y S y ) 4 , Cu 2 ZnSn(Se,S) 4 , Cu(In,Ga)Se 2 , and CdTe so that it is very attractive as a light absorber material for solar cells. [4][5][6][7][8] Several research efforts have recently been made on the CZTS-based solar cells since Katagiri et al reported a CZTS/CdS hetrojunction solar cell with 6.77%.…”

Section: Introductionmentioning

confidence: 99%

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

Htay

Hashimoto

Momose

et al. 2011

Jpn. J. Appl. Phys.

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A Cadmium-free Cu 2 ZnSnS 4 /ZnO hetrojunction solar cell with conversion efficiency of 4.29% has been obtained. The Cu 2 ZnSnS 4 absorber film was formed utilizing sulfurization of laminated metallic precursors, and the ZnO buffer layer was then deposited on it by ultrasonic spray pyrolysis. In comparison with a conventional Cu 2 ZnSnS 4 /CdS hetrojunction solar cell, the open circuit voltage as well as the relative quantum efficiency at the short-wavelength regions was increased. The in-plane homogeneity of p-n junction was improved by depositing the ZnO layer on Cu 2 ZnSnS 4 film via ultrasonic spray pyrolysis.

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Section: Introductionmentioning

confidence: 99%

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

Htay

Hashimoto

Momose

et al. 2011

Jpn. J. Appl. Phys.

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“…2,3 Replacing In and Ga in CIGS with earth-abundant Zn and Sn, we can obtain Cu 2 ZnSn(S x Se 1−x ) 4 (CZTSSe) which has drawn increased attention as an alternative absorber layer. [4][5][6][7][8][9] CZTSSe has optimal band gap (1.0-1.5 eV, depending on the S, Se compositions), 10 and also high absorption coefficient (∼10 4 cm −1 ) that make it suitable for solar cell application. 11 Nevertheless, the highest achieved efficiency, so far, using CZTSSe is 12.6%, 12 which is only about half of the similar structured CIGS-based solar cell.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

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A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

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“…In order to reduce a production technology cost, non-vacuum deposition methods such as spraying with pyrolysis, electrochemical deposition, chemical bath deposition, are used. These techniques have been developed in the production of semiconductor CIGS and CdTe thin films [14] and now can be used for the synthesis of CZTS [15][16][17][18]. Chemical bath deposition method allows easy regulation of the reagent concentrations and the deposition time.…”

Section: Introductionmentioning

confidence: 99%

Synthetic pathway of a Cu2ZnSnS4 powder using low temperature annealing of nanostructured binary sulfides

Кожевникова¹,

Ворох²,

Гырдасова³

et al. 2017

Nanosystems: Phys. Chem. Math.

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Cost-effective route to quaternary Cu 2 ZnSnS 4 nanostructured powder fabrication was developed by utilizing a two-step approach. In the first stage, nanostructured binary sulfides Cu 2 S, ZnS, and SnS were synthesized by chemical bath deposition. In the second stage, ternary sulfide Cu 2 ZnSnS 4 was obtained by low-temperature annealing of binary sulfides' mixtures at 70 and 300• C. The compounds obtained on both stages were investigated by X-ray diffraction, scanning electron microscopy, optical absorbance and Raman spectroscopy. On the basis of our findings, we established that Cu 2 ZnSnS 4 phase has already formed at 300• C. The synthetic pathway revealed in this work allows reducing the temperature of Cu 2 ZnSnS 4 synthesis and as a result, offers the possibility of reducing the manufacturing costs.

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Sprayed films of stannite Cu2ZnSnS4

Cited by 338 publications

References 4 publications

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Synthetic pathway of a Cu2ZnSnS4 powder using low temperature annealing of nanostructured binary sulfides

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Sprayed films of stannite Cu2ZnSnS4

Cited by 338 publications

References 4 publications

A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Synthetic pathway of a Cu2ZnSnS4 powder using low temperature annealing of nanostructured binary sulfides

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About

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes

A Cadmium-Free Cu₂ZnSnS₄/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes