Cu2ZnSnS4 (CZTS) thin films were prepared by simultaneous sputtering of metallic targets and sulfurizing a metallic precursor under elemental sulfur atmosphere in a sealed tube. Subsequently, they were applied to the fabrication of thin film solar cells. The precursors with desired compositional ratio and thickness were obtained by controlling the area ratio of sputtering targets and also sputtering parameters. We have succeeded in obtaining high-quality polycrystalline CZTS thin films by sulfurization under a sulfur vapor pressure higher than atmospheric pressure. A CZTS-based solar cell with 3.7% conversion efficiency was obtained from CZTS films sulfurized at 590 °C for 7 min.
Cu 2 Sn 1−x Ge x S 3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu 2 (Sn 1−x Ge x ) 3 S 7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu 2 Sn 0.6 Ge 0.4 S 3 absorber.
A Cadmium-free Cu 2 ZnSnS 4 /ZnO hetrojunction solar cell with conversion efficiency of 4.29% has been obtained. The Cu 2 ZnSnS 4 absorber film was formed utilizing sulfurization of laminated metallic precursors, and the ZnO buffer layer was then deposited on it by ultrasonic spray pyrolysis. In comparison with a conventional Cu 2 ZnSnS 4 /CdS hetrojunction solar cell, the open circuit voltage as well as the relative quantum efficiency at the short-wavelength regions was increased. The in-plane homogeneity of p-n junction was improved by depositing the ZnO layer on Cu 2 ZnSnS 4 film via ultrasonic spray pyrolysis.
A Cadmium-free Cu 2 ZnSnS 4 /ZnO hetrojunction solar cell with conversion efficiency of 4.29% has been obtained. The Cu 2 ZnSnS 4 absorber film was formed utilizing sulfurization of laminated metallic precursors, and the ZnO buffer layer was then deposited on it by ultrasonic spray pyrolysis. In comparison with a conventional Cu 2 ZnSnS 4 /CdS hetrojunction solar cell, the open circuit voltage as well as the relative quantum efficiency at the short-wavelength regions was increased. The in-plane homogeneity of p-n junction was improved by depositing the ZnO layer on Cu 2 ZnSnS 4 film via ultrasonic spray pyrolysis.
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