Spontaneous growth of whiskers from electrodeposited coatings

Glazunova, V.K.; Gorbunova, K.M.

doi:10.1016/0022-0248(71)90049-2

Cited by 13 publications

(7 citation statements)

References 9 publications

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“…Many models and mechanisms have been proposed: some are based on surface energy effects [10,11], stored energy [12], internal stresses [3,4], recrystallization [1], and the formation of intermetallics [6,[13][14][15][16][17][18], among others [2]. Unclear to date, however, is the origin of these compressive stresses and how they result in whisker growth.…”

mentioning

confidence: 99%

Driving Force and Mechanism for Spontaneous Metal Whisker Formation

et al. 2004

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The room temperature spontaneous growth of low melting point metal whiskers, such as Sn, poses a serious reliability problem in the semiconducting industry; a problem that has become acute with the introduction of Pb-free technology. To date, this 50+ year old problem has resisted interpretation. Herein we show that the driving force is essentially a reaction between oxygen and the sprouting metal. The resulting volume expansion creates a compressive stress that pushes the whiskers up. The model proposed explains our observations on In and Sn whiskers and many past observations. The solution is in principle simple: diffusion of oxygen into the metal must be prevented or slowed down. This was demonstrated by coating the active surfaces with a polymer coating.

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confidence: 99%

Driving Force and Mechanism for Spontaneous Metal Whisker Formation

et al. 2004

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“…We rather believe that compressive stresses on the Eu-123 phase due to the tensile strain from phases near by could be the driving force for whisker growth as suggested by Barsoum et al [24]. Several models and mechanisms are proposed so far to account for the compressive stresses, such as stored energy [25], internal stresses [16,26], recrystallization [27], etc. Although our observation does not provide sufficient evidence to favor one of such mechanisms, but we agree with Nagao et al [5,28] that the key is the formation of the (Ba,Ca) 3 TeO 6 phase which is always observed adjacent to the Eu-123 phase in the pellet.…”

Section: Article In Pressmentioning

confidence: 97%

Growth mechanism of EuBa2Cu3Ox single-crystalline whiskers from Ca and Te doped precursors

Islam¹,

Tachiki²,

Watauchi³

et al. 2006

Journal of Crystal Growth

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“…Compton et al [12] published early results of an investigation on the influence of base metals, plating bath composition, plating thickness, contamination and conditioning environment on whisker initiation/growth. Arnold and others [13][14][15][16][17][18][19][20] continued the whisker investigation by expanding into crystallographic orientation characterization, plating bath parameter influences, post plating treatments and other surface finish application technologies (i.e. vapor deposition, dipping, etc.)…”

Section: Industry Published Literature Reviewmentioning

confidence: 99%

Influence of Element Lead (Pb) Content in Tin Plating on Tin Whisker Initiation/Growth

Hillman,

Pearson,

Wilcoxon

et al. 2023

Journal of SMT

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The implementation of the Restriction of Hazardous Substances (RoHS) European Union (EU) Directive in 2005 resulted in the introduction of pure tin as an acceptable surface finish for printed circuit boards and component terminations. A drawback of pure tin surface finishes is the potential to form tin whiskers. Tin whiskers are a metallurgical phenomenon that is associated with tin rich/pure tin materials and has been a topic of intense industry interest. The acceptance and usage of pure tin by the electronics industry component fabricators is understandable as the pure tin surface finishes are inexpensive, are simple plating systems to operate and have reasonable solderability characteristics. However, high performance/harsh environment electronics typically have product life cycles that are measured in decades and therefore are much more susceptible to the potential long term threat of tin whiskers. The GEIA-STD-0005-2 “Standard for Mitigating the Effects of Tin Whiskers in Aerospace and High Performance Electronic Systems” established the definition of the term “Pb-free tin” as : “Pb-free Tin is defined to be pure tin or any tin alloy with <3% lead (Pb) content by weight. A functional definition of “pure tin” was necessary so that the electronics industry could establish tin whisker risk protocols against a known acceptable target value in terms of soldering materials and processes. An investigation was conducted to determine the influence of 1% - 5% elemental lead (Pb) content in tin plating on tin whisker initiation and growth. The investigation results were used in the revision of the GEIA-STD-0005-2 “Standard for Mitigating the Effects of Tin Whiskers in Aerospace and High Performance Electronic Systems” specification technical discussions.

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Spontaneous growth of whiskers from electrodeposited coatings

Cited by 13 publications

References 9 publications

Driving Force and Mechanism for Spontaneous Metal Whisker Formation

Driving Force and Mechanism for Spontaneous Metal Whisker Formation

Growth mechanism of EuBa2Cu3Ox single-crystalline whiskers from Ca and Te doped precursors

Influence of Element Lead (Pb) Content in Tin Plating on Tin Whisker Initiation/Growth

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