Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

Koronski, Kamil; Kamińska, A.; Zhigadlo, N. D.; Elias, Christine; Cassabois, Guillaume; Gil, Bernard

doi:10.1016/j.spmi.2019.05.018

Cited by 7 publications

(4 citation statements)

References 48 publications

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“…For instance, there are five low-temperature PL spectra with peaks at around 3.4−4.0 eV of multiple unknown defects in hBN that separately have positive and negative pressure coefficients, and only one PL peak at ∼3.4 eV exhibits a blueshift with increasing pressure from 1.3 to 5 GPa. 57 In addition, it was found that the pressure coefficients of the PL emission around 580−720 nm are anomalous, and these PL peaks show three different types of pressure responses corresponding to a redshift, a blueshift, or even a sign change from negative to positive, which may be attributed to the existence of competition between the intralayer and interlayer interaction contributions. 56 We further calculated the SiO 2 substrate effect on the ZPL of V B −1 based on a simple hBN/SiO 2 heterojunction model based on the Perdew−Burke−Ernzerhof (PBE) functional (Figure S7).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Color Centers in Hexagonal Boron Nitride Nanosheet-Based Heterojunctions: Implications for Quantum Emitters and Ultrathin Sensors

Ren,

Xu,

et al. 2024

ACS Appl. Nano Mater.

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Luminescence defects, which are commonly known as color centers in hexagonal boron nitride (hBN), are promising for applications in quantum sensing and emitters, but most of them are challenging to efficiently fabricate and identify. Here, we explore the photoluminescence (PL) spectra of color centers in hBN-based heterojunctions. We clearly observed a series of PL spectra with peaks at ∼680 nm in monolayer and nanometer-thick hBN/SiO 2 heterojunctions after helium-ion irradiation; the line shape and line width of those PL spectra are the same as the boron vacancy in bulk hBN with a peak at 818 nm. We also demonstrated a generation strategy for a carbon-related color center with a zero phonon line at 580.7 nm in a graphene/hBN/SiO 2 heterojunction using 1 keV argon-ion implantation without subsequent annealing. Furthermore, density functional theory calculations were used to speculate on the atomic structures and substrate effects of color centers in hBN-based heterojunctions. This work provides a highly efficient fabrication method for carbon-related color centers in monolayer hBN as quantum emitters and finds that the color centers with peaks at ∼680 nm in monolayer hBN are useful for the monitoring of the ion beam.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Color Centers in Hexagonal Boron Nitride Nanosheet-Based Heterojunctions: Implications for Quantum Emitters and Ultrathin Sensors

Ren,

Xu,

et al. 2024

ACS Appl. Nano Mater.

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“…[58] In the past decade, a majority of 2D ultrathin materials involving transition metal dichalcogenides (TMDs, e.g., MoS 2 , MoSe 2 , WSe 2 , WS 2 , TiS 2 , TaS 2 , etc. ), [49,[59][60][61] BN, [21][22][23][24][25][26]35,[62][63][64][65][66][67][68][69][70][71] BP, [72][73][74][75][76][77][78][79][80][81][82][83][84] 2D organic crystals (e.g., 2D small molecular and polymers), [85][86][87][88][89][90][91][92][93][94][95] 2D perovskites, [96][97][98][99]…”

Section: Ambient-pressure Structure and Propertiesmentioning

confidence: 99%

2D Materials and Heterostructures at Extreme Pressure

et al. 2020

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2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.

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“…It has been suggested to attribute these lines to carbon dimers C B C N that are expected to form whenever carbon is present during growth, explaining the observed correlation between the presence of carbon and the 4.1 eV line [143]. It is worthwhile noticing that the pressure coefficient of these transitions is smaller than the pressure coefficient of the band gap, which is typical of deep levels [144,145]. Recently, singlephoton emission associated with the 4.1 eV band has been reported [58] using cathodoluminescence excitation while we failed insofar to isolate Single Photon Source in our samples with 4.1 eV emission in far field macroscopic PL experiment, using a laser as an exciting source.…”

Section: Defects At 4 Evmentioning

confidence: 99%

Boron nitride for excitonics, nano photonics, and quantum technologies

et al. 2020

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AbstractWe review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 µm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.

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Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

Cited by 7 publications

References 48 publications

Color Centers in Hexagonal Boron Nitride Nanosheet-Based Heterojunctions: Implications for Quantum Emitters and Ultrathin Sensors

Color Centers in Hexagonal Boron Nitride Nanosheet-Based Heterojunctions: Implications for Quantum Emitters and Ultrathin Sensors

2D Materials and Heterostructures at Extreme Pressure

Boron nitride for excitonics, nano photonics, and quantum technologies

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