Splitting and storing excitons in strained coupled self-assembled quantum dots

Lundström, T.; Schoenfeld, Winston V.; Mankad, Tanaya; Jaeger, A.; Lee, H.; Petroff, P. M.

doi:10.1016/s1386-9477(99)00367-7

Cited by 8 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lundstrom et al recently reported the exciton storage in self-assembled InAs dots embedded in GaAs. The operation depends on the dissociation and separate storage of optically created excitons [112]. These achievements allow a possible application in the optical communication, but the charge holding time is extremely short at room temperature.…”

Section: Silicon Nanocrystals Memory Devices and Other Quantum Dot Mementioning

confidence: 99%

Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

View full text Add to dashboard Cite

Section: Silicon Nanocrystals Memory Devices and Other Quantum Dot Mementioning

confidence: 99%

Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

View full text Add to dashboard Cite

“…Recently, it has been reported on exciton storage in self‐assembled InAs dots in GaAs well in all‐electronic structure [2, 13]. The approach of the memory concept is based on created excitons by dissociation and separate storage of the optical electrons and holes [2, 13]. This Letter reports the storage phenomenon measured by the I – V curve at different light intensities.…”

Section: Introductionmentioning

confidence: 99%

Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

Guo

Zhang

et al. 2016

Micro & Nano Letters

View full text Add to dashboard Cite

The optical storage behaviour of InAs quantum dots (QDs) device has been investigated by testing capacitance-voltage (C-V) and currentvoltage (I-V) character. Since QDs are embedded in the GaAs quantum well, it can be charged by the spatial separation of electrons and holes. When the device is biased in a storage mode, the optical excitation with the photon energy larger than the energy gap gives rise to a step jump in the responsive current, which is previously stored in the device during the illumination. The holes in the QDs which represent the stored information are storage and deletion by bias. The storage time is on the order of milliseconds as measured by pulsed photovoltage/photocurrent response ratio of the device. The device structure can be used as a photonic memory cell because of long storage time and fast retrieval of photons. Moreover, the memory operation can be carried out by applying a lower voltage.

show abstract

“…6 Current methods of loading charges into QDs include in situ doping, 7 charge tunneling using metal-insulator-semiconductor field-effect transistor structures, 8 and X-valleys, 9 and resonant excitation using microphotoluminescence ͑-PL͒. 6 Current methods of loading charges into QDs include in situ doping, 7 charge tunneling using metal-insulator-semiconductor field-effect transistor structures, 8 and X-valleys, 9 and resonant excitation using microphotoluminescence ͑-PL͒.…”

mentioning

confidence: 99%

Controllable charge storage in quantum dots with independent tuning of electric fields

Gill

Moskovitz

Wang

et al. 2005

Applied Physics Letters

View full text Add to dashboard Cite

Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques Electrons and holes are loaded into ensembles of InAs/ GaAs quantum dots using a sequence of near-infrared optical pulses and voltage biases. The number and sign of charge carriers is completely determined by one of the voltage biases in the sequence. The injected charge remains stored in the dots for at least 10 s for a range of independently varied growth-direction electric fields and is detected by purely electrical means. The storage is robust to temperatures exceeding 80 K.

show abstract

Splitting and storing excitons in strained coupled self-assembled quantum dots

Cited by 8 publications

References 15 publications

Silicon Nanocrystal Flash Memory

Silicon Nanocrystal Flash Memory

Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure

Controllable charge storage in quantum dots with independent tuning of electric fields

Contact Info

Product

Resources

About