Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques Electrons and holes are loaded into ensembles of InAs/ GaAs quantum dots using a sequence of near-infrared optical pulses and voltage biases. The number and sign of charge carriers is completely determined by one of the voltage biases in the sequence. The injected charge remains stored in the dots for at least 10 s for a range of independently varied growth-direction electric fields and is detected by purely electrical means. The storage is robust to temperatures exceeding 80 K.
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