Spiral growth of topological insulator Sb2Te3 nanoplates

Hao, Guolin; Qi, Xiang; Fan, Yinping; Xue, Lin; Peng, Xiangyang; Wei, Xiaolin; Zhong, Jianxin

doi:10.1063/1.4773587

Cited by 36 publications

(21 citation statements)

References 37 publications

(35 reference statements)

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“…The sharpness of the Sb 2 Te 3 peaks measured on the cleaned samples is comparable to that observed in refs. and for crystalline Sb 2 Te 3 (in particular the full widths at half maximum of the Sb 2 Te 3 Raman peaks at ≈113 and ≈167 cm −1 , equal to ≈10 and ≈12 cm −1 , respectively, are very close to the value reported in refs. and ).…”

Section: Resultssupporting

confidence: 89%

“…On the as‐grown sample, the Raman peaks are visible at ≈120, ≈140, and ≈167 cm −1 , while, after the removal of the outgrowths, peaks are present at ≈113, ≈125, ≈140, and ≈167 cm −1 . The peaks at ≈113 and ≈167 cm −1 can be attributed to, respectively, the E 2 g and A 2 1g modes of Sb 2 Te 3 . The Raman peak at ≈140 cm −1 , visible both before and after cleaning, can be attributed to the E 2 modes of pure Te–Te bonds .…”

Section: Resultsmentioning

confidence: 89%

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High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Cecchini

Gajjela

Martella

et al. 2019

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Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys when synthetized in the form of high‐aspect‐ratio nanostructures. The ability to grow chalcogenide nanowires and nanopillars (NPs) with high crystal quality in a controlled fashion, in terms of their size and position, can boost the realization of novel thermoelectric, spintronic, and memory devices. Here, it is shown that highly dense arrays of ultrascaled Sb2Te3 NPs can be grown by metal organic chemical vapor deposition (MOCVD) on patterned substrates. In particular, crystalline Sb2Te3 NPs with a diameter of 20 nm and a height of 200 nm are obtained in Au‐functionalized, anodized aluminum oxide (AAO) templates with a pore density of ≈5 × 1010 cm−2. Also, MOCVD growth of Sb2Te3 can be followed either by mechanical polishing and chemical etching to produce Sb2Te3 NPs arrays with planar surfaces or by chemical dissolution of the AAO templates to obtain freestanding Sb2Te3 NPs forests. The illustrated growth method can be further scaled to smaller pore sizes and employed for other MOCVD‐grown chalcogenide alloys and patterned substrates.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 89%

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

Cecchini

Gajjela

Martella

et al. 2019

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“…Furthermore, when a Bi 2 Se 3 island interrupted a SiC step, two spirals would twist in opposite directions, forming two cores exactly at the step edges (Figure c). Zhong et al systematically investigated spiral growth in Sb 2 Te 3 nanoplates using AFM (Figure d). They employed BCF theory to explain the observation, and discussed the influence of growth pressure on the formation of spiral structures.…”

Section: Basic Production Methods For Ti Nanostructuresmentioning

confidence: 99%

“…d) AFM image of vapor phase deposited Sb 2 Te 3 NPs with clockwise spiral structures, produced by single dislocation on 300 nm SiO 2 /Si substrate. Reproduced with permission . Copyright 2013, American Institute of Physics.…”

Section: Basic Production Methods For Ti Nanostructuresmentioning

confidence: 99%

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

Guo

Liu

Peng

2015

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The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.

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“…KPFM has been widely used to characterize the electrostatic properties of nanostructures, especially graphene and graphene-derived materials with smooth inplane structures (21)(22)(23)(24). Recently, the thickness-dependence SPs and local work functions of graphene and graphenebased electrodes from organic solar cells have been investigated via KPFM for its own advantages on topography and potential distribution of the sample with high spatial resolution (22,25,26).…”

Section: Introductionmentioning

confidence: 99%

Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

Hao

et al. 2015

Fullerenes, Nanotubes and Carbon Nanostructures

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In the paper, the graphene oxide (GO) prepared by modified Hummers method was characterized by Raman spectrum, Fourier transform infrared spectrum (FTIR), and Atomic Force Microscopy (AFM). Using Kelvin Probe Force Microscopy (KPFM), the surface potential of GO was investigated, and it was found that the GO film exhibited the uniform surface potential distribution. The surface potentials at the edges and wrinkles of GO film were much lower than that at the in-plane flat area, which is proposed to be contributed to the bonds' unsaturated and disorder at these zones. These results provide insight into understanding electronic properties of GO-based composites and devices.

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Spiral growth of topological insulator Sb2Te3 nanoplates

Cited by 36 publications

References 37 publications

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

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Spiral growth of topological insulator Sb2Te3 nanoplates

Cited by 36 publications

References 37 publications

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

Surface Potential of Graphene Oxide Investigated by Kelvin Probe Force Microscopy

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Product

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High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

High‐Density Sb₂Te₃ Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth