Spintronic Device Based Non-volatile Low Standby Power SRAM

Zhao, Weisheng; Belhaire, E.; Chappert, C.; Mazoyer, P.

doi:10.1109/isvlsi.2008.11

Cited by 18 publications

(9 citation statements)

References 17 publications

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“…The current pursuit in the eld of materials research is to develop a material for spintronics applications, where the spin degree of freedom of an electron plays a signicant role in encoding, faster transfer and processing of data as compared to a charged based equivalent transistor, 1,2 as well as low power consumption, 3 high circuit density 4 and non-volatility. 5 The performance of a spintronic device depends on efficiency of spin injection from electrodes to semiconductors and their degree of spin polarization. The spintronic devices mostly consist of a non-magnetic layer sandwiched between two ferromagnetic electrodes like giant-magnetoresistance (GMR), 6,7 tunnelling magnetoresistance (TMJ) 8 and magnetic tunnel junction (MTJ) 9 devices.…”

Section: Introductionmentioning

confidence: 99%

Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)

et al. 2020

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Section: Introductionmentioning

confidence: 99%

Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)

et al. 2020

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“…The inputs provided were bidirectional currents, and the MTJ device stored the result of the operation. In other works with MTJ-based logic structures, hybrid CMOS-MTJ computing elements such as a flip-flop [16,18], non-volatile SRAM [17], FPGA look-up tables [2] and a full adder [8] were developed. In all these circuits, MTJs are used as the central memory devices in their function, and supporting electronic circuitry performed the necessary read, write or logic functions on the data within the MTJs.…”

Section: Related Workmentioning

confidence: 99%

“…They have been also used for accomplishing the logic functions of NAND, NOR, AND and OR with a single device [14]. Other functions, such as a hybrid SRAM and flip-flops, have also been designed and fabricated [16,17,18], and more complex functions like a hybrid adder [8] have been developed. These works have evaluated and demonstrated various aspects of the spintronic technology: feasibility of logic functions with MTJs, the integration of MTJs with CMOS and the potential for power advantages of using hybrid MTJ-CMOS computing units.…”

Section: Introductionmentioning

confidence: 99%

Performing bitwise logic operations in cache using spintronics-based magnetic tunnel junctions

Patil

Lilja

2011

Proceedings of the 8th ACM International Conference on Computing Frontiers

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Recent exciting developments in the emerging field of spintronics have enabled rapid advances in spintronic devices such as magnetic tunnel junctions (MTJs). While MTJs are being primarily used as the basic devices in non-volatile memory, they have also been shown to accomplish primitive logic functions. However, the spintronic nature of the logic operation makes it challenging to accomplish tasks such as cascading of logic gates, operations on multiple outputs, and various combinations of these. In order to enable these primary functions, we propose the idea of adding interconnections between MTJ devices in a spintronic memory array. With this added connectivity, we show that the memory array gains the ability to perform bitwise logic operations on the data stored within it without intermediate computing circuits. We demonstrate that the basic logic operations of NAND, AND, OR and XOR operations can be performed in the memory array using the memory devices themselves. We describe the algorithms for performing the logic operations in memory and introduce the notion of a 'footprint' to compare the complexities of the operations in terms of their memory usage, data requirements and time steps. Taking into account the minimum interconnection requirements of these logic functions, we propose the design of a general spintronic logic-in-cache block and demonstrate the ADD function with it.

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“…phase change memory -PCM [7]) have to be changed to define a nonvolatile state, spin-based MTJs are controlled only by electron spin [8]. In addition to energy efficiency (little energy is needed to change the electron spin), MTJs provide radiation immunity, high speed data switching, higher density, infinite endurance as well as the ability to continue shrinking in size [9]. Moreover, they can be very easily co-integrated with the CMOS without imposing the area overhead, as illustrated in Fig.…”

Section: Introductionmentioning

confidence: 99%

MTJ-based hybrid storage cells for “normally-off and instant-on” computing

2015

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Besides increasing a computing throughput, multi-core processor architectures bring increased capacity of SRAM-based cache memory. As a result, cache memory now occupies large proportion of recent processor chips, becoming a major source of the leakage power consumption. The power gating technique applied on a SRAM cache is not efficient since it is paid by data loss. In this paper, we present two hybrid memory cells that combine a conventional volatile CMOS part with Magnetic Tunnel Junctions (MTJs) able to store a data bit in a non-volatile way. Being inherently nonvolatile, these hybrid cells enable instantaneous power off and thus complete reduction of the leakage power. Moreover, given that the data bit can be stored in local MTJs and not in distant storage memories, these cells also offer instantaneous and efficient data retrieval. To demonstrate their functionality, the cells are designed using 28 nm FD-SOI technology for the CMOS part and 45 nm round spin transfer torque MTJs (STT-MTJs) with perpendicular magnetization anisotropy. We report the measured performances of the cells in terms of required silicon area, robustness, read/write speed and energy consumption.

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Spintronic Device Based Non-volatile Low Standby Power SRAM

Cited by 18 publications

References 17 publications

Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)

Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)

Performing bitwise logic operations in cache using spintronics-based magnetic tunnel junctions

MTJ-based hybrid storage cells for “normally-off and instant-on” computing

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Spintronic Device Based Non-volatile Low Standby Power SRAM

Cited by 18 publications

References 17 publications

Half-metallicity in new Heusler alloys Mn2ScZ (Z = Si, Ge, Sn)

Half-metallicity in new Heusler alloys Mn2ScZ (Z = Si, Ge, Sn)

Performing bitwise logic operations in cache using spintronics-based magnetic tunnel junctions

MTJ-based hybrid storage cells for “normally-off and instant-on” computing

Contact Info

Product

Resources

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Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)

Half-metallicity in new Heusler alloys Mn₂ScZ (Z = Si, Ge, Sn)