1999
DOI: 10.1063/1.369883
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Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn

Abstract: Spin-valve ͑SV͒ films Si͑100͒/Ta30/NiFe50/CoFe20/Cu26/CoFe23/Ru7/CoFe20/IrMn50/Ta30 ͑in Å͒ exhibit a room temperature ͑RT͒ giant magnetoresitance ͑GMR͒ ratio of 8.5% with an effective exchange pinning field (H eex ) of ϳ1.3 kOe and an antiferromagnetic ͑AF͒ saturation field ͑Hs͒ of ϳ6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150°C with H eex Ͼ500 Oe, while a conventional spin valve ͓Si͑100͒/Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Å͔ has a GMR ratio of 5.0% with H ex Ͻ200 Oe. The synth… Show more

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Cited by 67 publications
(18 citation statements)
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“…Such a system may consist of a stacking of an antiferromagnetic layer ͑AF͒ and two ferromagnetic layers ͑A and B͒ separated by a nonmagnetic interlayer. [10][11][12] The interaction at the interface of layer A with AF gives rise to a unidirectionnal anisotropy called exchange anisotropy. [13][14][15][16][17][18][19][20][21] This anisotropy can be modeled as a magnetic field H E , the exchange anisotropy field.…”
Section: Introductionmentioning
confidence: 99%
“…Such a system may consist of a stacking of an antiferromagnetic layer ͑AF͒ and two ferromagnetic layers ͑A and B͒ separated by a nonmagnetic interlayer. [10][11][12] The interaction at the interface of layer A with AF gives rise to a unidirectionnal anisotropy called exchange anisotropy. [13][14][15][16][17][18][19][20][21] This anisotropy can be modeled as a magnetic field H E , the exchange anisotropy field.…”
Section: Introductionmentioning
confidence: 99%
“…We deposited a synthetic antiferromagnet (Co-10 mol%Fe, P1 30 nm/Ru 8 nm/Co-10 mol%Fe, P2 30 nm) between Mn-17 mol%Ir-2 mol%Pt and Cu layers of bottom SVs. 8) The spin rotation of a pinned layer is controlled by the magnetization reversal of P1 (adjacent with Mn-17 mol%Ir-2 mol%Pt) and P2 (adjacent with Cu). The strong AFM coupling of P1 and P2 contributes to the large H ex , which is called the effective exchange field (H eff,ex ) in a synthetic SV.…”
Section: Resultsmentioning
confidence: 99%
“…With shrinking read gap thickness, PtMn eventually was abandoned for IrMn due to its relatively large minimum thickness requirement. Rather than using a single pinned layer as the reference layer, an antiparallel coupled pinned layer structure is commonly used [37,38], which comprises the PL, typically a CoFe-based multilayer, being exchange coupled to the AF at its lower interface; the ACL; and the RL, typically a CoFe-and CoFeB-based multilayer, in contact with the tunnel junction at its upper interface.…”
Section: Growth and Processing Of Tunneling Magnetoresistance Sensorsmentioning
confidence: 99%