Spin-Pump-Induced Spin Transport inp-Type Si at Room Temperature

Abstract

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

“…As Py-based structures is one of the most investigated systems for spin pumping and ISHE 14,[16][17][18][20][21][22][23] , our approach used here is useful for systems other than the (Ga,Mn)As-based one.…”

“…Thus, by measuring the d.c. electromotive force, one can determine the value of y SHE . Spin injection and detection based on spin pumping and the ISHE have been applied to a variety of material systems [13][14][15][16][17][18][19][20][21][22][23] . Recent work showed that it may be a promising tool for the generation and investigation of spin current in semiconducting materials, such as Si (refs 16,17), Ge (refs 18,19) and GaAs with n-type as well as p-type conduction 20 .…”

Systematic variation of spin-orbit coupling withd-orbital filling: Large inverse spin Hall effect in3dtransition metals

“…SHE depends on the SOC and θ SH is a measure of the strength of SOC. Because of the generally accepted Z 4 dependence of SOC, measurement of θ SH has been focused on heavy elements by SHE [8] or inverse spin Hall effect (ISHE) [9][10][11][12][13][14][15], while 3d metals have rarely been studied [16,17].…”

“…θ SH is a measure of SOC and can be calculated from [9,10,12,14], respectively, of the Cr layer, SD is the spin diffusion length of Cr, is the interfacial spin mixing conductance, P = 1.21 is a factor arising from the ellipticity of the magnetization precession [7], γ is the gyromagnetic ratio, h rf = 0.25 Oe is the rf field at P rf = 200 mW [7], and α is the Gilbert damping constant of YIG. To calculate θ SH , we first determine SD from the Cr thickness (t Cr ) dependence of V ISHE [ Fig.…”

“…Figure 2(i) plots the t Cr dependence of V ISHE /Rw, from which we obtain SD = 13.3 ± 2.1 nm by fitting to ISHE SD tanh C SD [25]. can be obtained from the spin-pumping enhancement of damping [9][10][11][12],…”