1997
DOI: 10.1063/1.120014
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Spin-polarized quasiparticle injection devices using Au/YBa2Cu3O7/LaAlO3/Nd0.7Sr0.3MnO3 heterostructures

Abstract: Oxide heterostructures were used for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of injection of spin polarized quasiparticles from a ferromagnetic gate layer was compared to that of unpolarized quasiparticles from a nonmagnetic metallic gate. Transport measurements of the superconducting layer showed strong suppression in the supercurrent by the injection of spin-polarized quasiparticles, and a current gain of as large as five was attained. This is 10 to 30 tim… Show more

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Cited by 165 publications
(81 citation statements)
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“…In an earlier theoretical work, 5 this effect was studied in the zero-bias limit. Several recent spin injection experiments [6][7][8][9] have been done with high-T c superconductors. Common to both ferromagnetconventional and high-T c superconductor junctions, the subgap conductance at a given bias is suppressed due to the suppression of AR by the spin splitting of energy band in the ferromagnet.…”
Section: Introductionmentioning
confidence: 99%
“…In an earlier theoretical work, 5 this effect was studied in the zero-bias limit. Several recent spin injection experiments [6][7][8][9] have been done with high-T c superconductors. Common to both ferromagnetconventional and high-T c superconductor junctions, the subgap conductance at a given bias is suppressed due to the suppression of AR by the spin splitting of energy band in the ferromagnet.…”
Section: Introductionmentioning
confidence: 99%
“…More recently, experiments were performed by different groups in order to establish whether superconductivity can be suppressed by injecting spinpolarized quasiparticles. [2][3][4] In these cases the combinations existed of a d-wave high-T c superconductor (XBa 2 Cu 3 O 7 , with XϭY, Dy͒ and a fully spin-polarized ferromagnetic manganite (A 0.67 B 0.33 MnO 3 with AϭLa, Nd and BϭCa, Sr͒, either with or without a barrier of a different oxide; measured was the change in the zero-field critical current density J c0 of the superconducting films upon applying a current bias through the ferromagnet. The results are not fully conclusive, and certainly not quantitative.…”
Section: Introductionmentioning
confidence: 99%
“…They have shown that the F/S/F double tunnel junction is a magnetoresistive device to control superconductivity by applying the bias voltage or current. The suppression of the superconductivity by the spin injection in the double tunnel junction was observed by Dong et al [16]. In this article, we theoretically study the spindependent transport of the F/S/F SET transistors at zero temperature with a special attention to the parity effect.…”
mentioning
confidence: 99%