Spin Polarized Electron Tunneling

LeClair, P.; Moodera, J. S.; Swagten, Hjm Henk

doi:10.1007/3-540-27163-5_3

Cited by 8 publications

(5 citation statements)

References 157 publications

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“…Such a behaviour should be expected if spin-flip scattering across the tunnel barrier and magnon scattering is enhanced for higher bias values. 23 In addition, the coercive field of the top electrode shifts to lower magnetic fields when increasing V 4pt . We attribute this to a slight temperature increase of the MTJ due to the higher current density flowing through it at larger voltage bias.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Althammer

Singh

Keshavarz

et al. 2016

Journal of Applied Physics

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We experimentally investigate the structural, magnetic and electrical transport properties of La 0.67 Sr 0.33 MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the large number of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched STiO 3 barrier, reaching values of up to 350 % at T = 5 K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200 K. Our results suggest that by employing a better lattice matched ferromagnetic electrode and thus reducing the structural defects in the strontium stannate barrier even larger TMR ratios might be possible in the future.

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Section: Resultsmentioning

confidence: 99%

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Althammer

Singh

Keshavarz

et al. 2016

Journal of Applied Physics

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“…This effect is named tunnel magnetoresistance (TMR; e.g. [8]), similar to the giant magnetoresistance for a spin-valve structure (e.g. [9]).…”

Section: Introductionmentioning

confidence: 97%

Anisotropic magnetoresistance in Fe/MgO/Fe tunnel junctions

Khan

Henk

Bruno

2008

J. Phys.: Condens. Matter

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The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direction of the magnetization in the leads, as is investigated by relativistic first-principles electronic structure and transport calculations. The rotation of the parallel aligned lead magnetizations from in-plane to perpendicular orientation with respect to the interfaces, that is tunnel anisotropic magnetoresistance (TAMR), increases the zero-bias conductance by about 30%. The effect originates from both the Rashba spin-orbit interaction at the interfaces and from resonant tunneling. Spin-orbit induced band gaps in the leads show no considerable effect on the anisotropic magnetoresistance. The tunnel magnetoresistance (TMR), i.e. the dependence of the conductance on the mutual angle between the lead magnetizations, is also addressed.

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“…This model relates the TMR effect to the spin polarization P in each ferromagnetic layer. Using conventional ferromagnetic layers with an AlO x barrier, TMR of ∼50% has been recorded [24].…”

Section: Introductionmentioning

confidence: 99%

Are the surfaces of CrO₂metallic?

Ventrice¹,

Borst²,

Geisler³

et al. 2007

J. Phys.: Condens. Matter

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Previous photoelectron spectroscopy studies of CrO2 have found either no density of states or a very low density of states at the Fermi level, suggesting that CrO2 is a semiconductor or a semi-metal. This is in contradiction to calculations that predict that CrO2 should be a half-metallic ferromagnet. Recently, techniques have been developed to grow high-quality epitaxial films of CrO2 on TiO2 substrates by chemical vapour deposition. We present photoelectron spectroscopy measurements of epitaxial CrO2(110)/TiO2(110) and CrO2(100)/TiO2(100) grown using a CrO3 precursor. In addition, measurements of epitaxial Cr2O3(0001)/Pt(111) films grown by thermal evaporation of Cr in an oxygen atmosphere are presented as a reference for reduced CrO2 films. The measurements of the CrO2 surfaces show no emission at the Fermi level after sputtering and annealing the surfaces in oxygen, even though our soft core photoemission data and low-energy electron diffraction measurements provide evidence that stoichiometric CrO2 is present. The consequence of this is that neither surface of CrO2 is metallic. This behaviour could result from a metal to semiconductor transition at the (110) and (100) surfaces.

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Spin Polarized Electron Tunneling

Cited by 8 publications

References 157 publications

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Anisotropic magnetoresistance in Fe/MgO/Fe tunnel junctions

Are the surfaces of CrO₂metallic?

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Spin Polarized Electron Tunneling

Cited by 8 publications

References 157 publications

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Anisotropic magnetoresistance in Fe/MgO/Fe tunnel junctions

Are the surfaces of CrO2metallic?

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Product

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Are the surfaces of CrO₂metallic?