Spin polarization of self-assembled CdSe quantum dots in ZnMnSe

Oh, Eunsoon; Yee, Ki‐Ju; Soh, S. M.; Lee, J. U.; Woo, J. C.; Jeon, Heonsu; Kim, D. S.; Lee, S.; Furdyna, J. K.; Ri, H.-C.; Chany, H. S.; Park, S. H.

doi:10.1063/1.1630381

Cited by 18 publications

(5 citation statements)

References 14 publications

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“…The magnetic field dependence follows the Brillouin function, which is a signature of Mn magnetism. Similar results were also observable for other DMS QDs [4,6]. The insert of Fig.…”

Section: Resultssupporting

confidence: 85%

“…The spin relaxation time is then estimated to be about 23 ns. This spin relaxation time is much longer than other type-I QD systems [4] and could be useful for spin manipulations.…”

Section: Resultsmentioning

confidence: 98%

“…Semiconductor nanostructures, particularly self-assembled Quantum Dots (QDs), are of great interest in this regard because of the long spin times that could allow control and manipulation of the electron spin [3]. Recently, spin response time of ensemble CdSe/ZnMnSe QD system was studied by the time resolved Photoluminescence (PL) measurements [4]. Nearly, complete spin polarization was observed at 5 K and magnetic field above 1 Tesla (T).…”

Section: Introductionmentioning

confidence: 98%

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Magneto-optical properties of ZnMnTe/ZnSe quantum dots

Fan

Chou

et al. 2011

Journal of Crystal Growth

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“…The magnetic field dependence follows the Brillouin function, which is a signature of Mn magnetism. Similar results were also observable for other DMS QDs [4,6]. The insert of Fig.…”

Section: Resultssupporting

confidence: 85%

“…The spin relaxation time is then estimated to be about 23 ns. This spin relaxation time is much longer than other type-I QD systems [4] and could be useful for spin manipulations.…”

Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

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Magneto-optical properties of ZnMnTe/ZnSe quantum dots

Fan

Chou

et al. 2011

Journal of Crystal Growth

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“…[3][4][5][6][7][8] The recent interests in spintronics stimulate more attention on this system. [9][10][11][12] Unfortunately, the incorporation of the Mn composition into the alloys induces a larger lattice mismatch, which might generate a huge number of defects and deteriorate the sample quality. Consequently, the optical properties will be greatly affected.…”

Section: Zn 1−x Mnmentioning

confidence: 99%

Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates

Lu¹,

Jiang²,

Dai³

et al. 2006

Journal of Applied Physics

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Magnetophotoluminescence properties of Zn 0.88 Mn 0.12 Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field ͑Ͻ1 T͒, but the peak energy is almost unchanged. There is a crossover of the photoluminescence intensities between interband and bound excitonic transitions as the magnetic field is increased to about 1 T. These behaviors are interpreted by the strong tuning of the local alloy disorder potential by the applied magnetic field. In addition, the magnetic field-induced suppression of the energy transfers from excitons to Mn 2+ ions is also observed.

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“…The resulting II-Mn-VI alloys (e.g., CdMnSe or ZnMnSe), known as a diluted magnetic semiconductors (DMSs), exhibit giant Zeeman splittings of the band edges in the presence of an applied magnetic field [3]. This in turn leads to a strong spin polarization of carriers in DMS quantum structures [4,5] thus providing a powerful tool for the study and manipulation of spin phenomena.…”

Section: Introductionmentioning

confidence: 99%

Coupled II–VI semiconductor quantum dots: manipulation of spin polarization by inter‐dot exchange interaction

Lee

Furdyna

Dobrowolska

2005

phys. stat. sol. (c)

Self Cite

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We have studied self-assembled QDs in the form of single-and double-QD layer systems. The double layers were formed either from CdSe and CdZnSe layers, or from CdSe and CdZnMnSe layers, separated by ZnSe barriers. When a magnetic field is applied to the CdSe/CdZnSe double-QD layer, the intensities of the circularly polarized PL peaks corresponding to the CdSe and CdZnSe layers exhibit significant differences, reflecting correspondingly large differences in the degrees of spin polarization of the CdSe and the CdZnSe QDs. This contrasts with the PL observed on single-layer CdSe or CdZnSe QD reference structures, both of which show nearly identical dependences on the field. The behavior observed on the double-layer QD structures is interpreted in terms of anti-parallel spin interaction between carriers localized in the coupled QD pairs. Such spin interaction is even more pronounced in double-layer structures in which CdZnMnSe QW or QDs are used instead of CdZnSe QDs, reflecting the high potential of magnetic quantum structures in the context of spin-polarized applications. IntroductionSpin states in quantum dots (QDs) have recently been proposed as viable candidates for quantum bits in quantum computing.[1] As an important step toward this application one must have a good understanding of spin phenomena in QDs, as well as the ability to control and manipulate spins localized in this way. Coupled QD pairs are especially interesting in this context, since they constitute the simplest and at the same time the most informative QD system for studying spin interactions in a highly-localized geometry. Theoretical calculations [2] predict that when QDs are coupled, spins localized in one QD tend to align anti-parallel (antiferromagnetically) with those in is neighbor. This automatically provides a handle for manipulating spin states in the QD geometry.

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Spin polarization of self-assembled CdSe quantum dots in ZnMnSe

Cited by 18 publications

References 14 publications

Magneto-optical properties of ZnMnTe/ZnSe quantum dots

Magneto-optical properties of ZnMnTe/ZnSe quantum dots

Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates

Coupled II–VI semiconductor quantum dots: manipulation of spin polarization by inter‐dot exchange interaction

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