2022
DOI: 10.1016/bs.hmm.2022.10.001
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Spin-orbit torque switching of magnetic tunnel junctions for memory applications

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Cited by 5 publications
(3 citation statements)
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“…A schematic and pulse-width dependence of the switching current of such SOT+STT device are shown in Figure 17b. Grimaldi et al [10] and Krizakova et al [172][173][174] also demonstrated that the combination of SOT, STT, and the voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-nanosecond switching with the speed of the cumulative switching time smaller than 0.2 ns. They also find from time-resolved measurements that SOT switching involves a stochastic two-step process that consists of domain nucleation and propagation, which have different genesis, timescales, and statistical distributions compared to STT switching.…”
Section: Prototype Perpendicular Sot Memory Devicesmentioning
confidence: 99%
“…A schematic and pulse-width dependence of the switching current of such SOT+STT device are shown in Figure 17b. Grimaldi et al [10] and Krizakova et al [172][173][174] also demonstrated that the combination of SOT, STT, and the voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-nanosecond switching with the speed of the cumulative switching time smaller than 0.2 ns. They also find from time-resolved measurements that SOT switching involves a stochastic two-step process that consists of domain nucleation and propagation, which have different genesis, timescales, and statistical distributions compared to STT switching.…”
Section: Prototype Perpendicular Sot Memory Devicesmentioning
confidence: 99%
“…Magnetic materials play a vital role in numerous daily life applications ranging from transportation to medicine and electronics, to energy harvesting and household appliances [1][2][3][4][5]. Various magnetic materials have been investigated to explore their magnetic properties and application potentials.…”
Section: Introductionmentioning
confidence: 99%
“…[ 44 ] In the specific case of magnetic tunnel junctions, they also provide important advantages over STT, such as higher endurance, lower read disturbance, and greater design flexibility. [ 45–53 ]…”
Section: Introductionmentioning
confidence: 99%