Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices. More specifically, in heavy metal-ferromagnet-insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties such as interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate a 130% variation of DMI with electric field in Ta/FeCoB/TaO trilayer through Brillouin Light Spectroscopy (BLS). Using polar magneto-optical Kerr-effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with an electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion-based memory or logic devices.

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the currentdriven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices. Switching nanomagnets by current injection offers unparalleled scalability, as well as low power and high speed operation compared to control via external magnetic fields 1-3. Spin-transfer torques (STT) 1,4 are presently employed in memory and spin logic applications 5,6 to control the state of magnetic tunnel junctions (MTJ) via an electric current passing through the reference and free magnetic layers, which allows also for efficient readout of the MTJ through the tunnel magnetoresistance (TMR). Time-resolved studies of magnetization reversal in spin valve 7,8 and MTJ devices 9-12 have shown that STT enables switching on a timescale of 100 to 1 ns, depending on the driving current 13 and external field 14. However, STT switching is characterized by nonreproducible dynamic paths and incubation times up to several tens of ns long, which limit the reliability and speed of the reversal process to about 10-20 ns, even when mitigation strategies based on large driving currents or noncollinear spin injection are employed 13,15,16. These limitations may be overcome by magnetization reversal driven by spin-orbit torques (SOT) 3,17-19 , which has been recently demonstrated in three-terminal MTJs with in-plane 20,21 as well as out-of-plane magnetization 22-25. SOT switching combines an in-plane current injection geometry with charge-to-spin conversion due to the spin Hall effect and interfacial spin scattering 3. Such a geometry decouples the write and read current paths, improving the MTJ endurance and operation speed by minimizing electrical stress of the tunnel barrier and allowing for tuning the barrier thickness for high TMR, fast read-out, and minimal read disturbances. Moreover, in devices with perpendicular magnetization, the injected spin current is orthogonal to the quiescent magnetization of the free layer, thus providing an "instant on" torque that is expected to minimize the switching incubation time 25-27 .

We report time-resolved measurements of magnetization switching by spin–orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJs). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage, we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage, the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight into the parameters that determine the critical switching voltage.

We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the ability to switch the MTJ on the sub-ns time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltagecontrolled change of the perpendicular magnetic anisotropy, current-induced heating, and the spin transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters.

We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral N\'eel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications.Comment: 5 pages, 4 Figure

Measurements of the transverse Hall resistance are widely used to investigate electron transport, magnetization phenomena, and topological quantum states. Owing to the difficulty of probing transient changes of the transverse resistance, the vast majority of Hall effect experiments are carried out in stationary conditions using either dc or ac. Here we present an approach to perform time-resolved measurements of the transient Hall resistance during current-pulse injection with sub-nanosecond temporal resolution. We apply this technique to investigate in real-time the magnetization reversal caused by spin-orbit torques in ferrimagnetic GdFeCo dots. Single-shot Hall effect measurements show that the current-induced switching of GdFeCo is widely distributed in time and characterized by significant activation delays, which limit the total switching speed despite the high domain-wall velocity typical of ferrimagnets. Our method applies to a broad range of current-induced phenomena and can be combined with non-electrical excitations to perform pump-probe Hall effect measurements.

We study field-driven domain wall (DW) velocities in asymmetric multilayer stacks with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction (DMI), both experimentally and by micromagnetic simulations. Using magneto-optical Kerr microscopy under intense and nanoseconds-long fields, we show that DWs in these films propagate at velocities up to hundreds of m/s and that, instead of the expected decrease of velocity after the Walker field, a long plateau with constant velocity is observed, before breakdown. Both the maximum speed and the field extent of the velocity plateau strongly depend on the values of the spontaneous magnetization and the DMI strength, as well as on the magnetic anisotropy. Micromagnetic simulations reproduce these features in sufficiently wide strips, even for perfect samples. A physical model explaining the microscopic origin of the velocity plateau is proposed. I.arXiv:1908.08282v1 [cond-mat.mes-hall]

The ability to represent information using an antiferromagnetic material is attractive for future antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisotropy for electrical manipulation. A practical realization of these antiferromagnetic devices is limited by the requirement of material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. A comparison of electrical transport measurements in PtMn with and without the Pt layer, corroborated by x-ray imaging, reveals reversible switching of the thermally-stable antiferromagnetic Néel vector by spin-orbit torques. The presented results demonstrate the potential of polycrystalline metals for antiferromagnetic spintronics.