Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Edmonds, Mark T.; Beveren, L. H. Willems van; Klochan, O.; Červenka, Jiří; Ganesan, Kumaravelu; Prawer, S.; Ley, L.; Hamilton, A. R.; Pakes, C. I.

doi:10.1021/nl502081y

Cited by 40 publications

(28 citation statements)

References 24 publications

(54 reference statements)

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“…Functionalized diamond surfaces have emerged as a promising device platform in many diverse application areas, such as high sensitivity nanomagnetometry, biosensing, cold cathode electron emitters and spintronics . The interest in diamond surfaces stems from the ability to engineer significantly contrasting properties with a simple change in the terminating species, as well as the advantages that bulk diamond properties offer for such applications.…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Sear

Schenk

Tadich

et al. 2018

Physica Status Solidi (a)

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High resolution X‐ray photoelectron spectroscopy is used to explore the thermal stability of as‐prepared and oxidized silicon and germanium‐terminated (100) diamond surfaces which form two domain (3 × 1) surface reconstructions. The as‐prepared germanium and silicon‐terminated surfaces are stable up to 1200 °C, making them the most thermally stable surface termination for diamond (100). The oxidized forms of these surfaces can be created via exposure to O2, H2O or atmospheric conditions and retain the (3 × 1) surface symmetry. The thermal stability of the oxidized surfaces exhibit differing behavior. A 700 °C anneal is sufficient to liberate oxygen from the germanium‐oxide‐terminated (100) diamond surface, leaving the pristine germanium‐terminated surface, while the silicon‐oxide‐terminated surface is thermally stable up to 1200 °C, at which point both silicon and oxygen are removed.

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Section: Introductionmentioning

confidence: 99%

Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Sear

Schenk

Tadich

et al. 2018

Physica Status Solidi (a)

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“…Mathematically, the quadratic dependence arises from the (ω c τ ) 2 =(µB z ) 2 term in the conductivity tensor 44 . Note that this behaviour is quite different than the negative MR (NMR) usually observed for other carbon-based systems such as N-doped ultra-nanocrystalline diamond (N-UNCD) films 45 (n-type in 3D) or hydrogen terminated diamond surfaces (p-type in 2D), where the transport is dominated by weak (anti) localization (WL) effects 46 . For doping densities close to the MIT WL is less pronounced.…”

Section: Electronic Transport Measurementsmentioning

confidence: 58%

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Beveren

Liu

Bowers

et al. 2016

Journal of Applied Physics

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Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ionimplantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process. a)

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“…When increasing the temperature, the zero-field resistance can be seen to invert, and finally demonstrates a sharp peak centred at zero magnetic field. Such non-monotonic resistance features are not at all expected for superconducting systems showing purely field induced Cooper pair breaking but are rather more likely to result from WAL due to the presence of spin orbit coupling, which has been widely observed in diamond interfaces 38,39,40 . The observation of the WAL effect is significant as it is a hallmark feature of spin orbit coupling in a 2D system, and considering the confinement as well as charging effects intrinsic to the nanocrystals that compose the film we attribute this observation to the interfacial region between individual grains (shown in figure 1 (a)-(c)).…”

Section: Magnetoresistancementioning

confidence: 94%

Effects of Rashba-spin–orbit coupling on superconducting boron-doped nanocrystalline diamond films: evidence of interfacial triplet superconductivity

et al. 2020

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Among the many remarkable properties of diamond, the ability to superconduct when heavily doped with boron has attracted much interest in the carbon community. When considering the nanocrystalline boron doped system, the reduced dimensionality and confinement effects have led to several intriguing observations most notably, signatures of a mixed superconducting phase. Here we present ultra-high-resolution transmission electron microscopy imaging of the grain boundary and demonstrate how the complex microstructure leads to enhanced carrier correlations. We observe hallmark features of spin–orbit coupling (SOC) manifested as the weak anti-localization effect. The enhanced SOC is believed to result from a combination of inversion symmetry breaking at the grain boundary interfaces along with antisymmetric confinement potential between grains, inducing a Rashba-type SOC. From a pronounced zero bias peak in the differential conductance, we demonstrate signatures of a triplet component believed to result from spin mixing caused by tunneling of singlet Cooper pairs through such Rashba-SOC grain boundary junctions.

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Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Cited by 40 publications

References 24 publications

Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Effects of Rashba-spin–orbit coupling on superconducting boron-doped nanocrystalline diamond films: evidence of interfacial triplet superconductivity

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