Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Sear, Michael J.; Schenk, Alex; Tadich, Anton; Stacey, Alastair; Pakes, C. I.

doi:10.1002/pssa.201800283

Cited by 10 publications

(2 citation statements)

References 45 publications

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“…This relatively modest energy is difficult to interpret on an absolute scale, as the reaction energies necessitate the presumption of the reactants involved. However, the stabilisation of the (0 0 1)-diamond surface by the addition of Si is broadly consistent with the experimental observation of Si termination up to about 1200 °C [36].…”

Section: Discussionsupporting

confidence: 88%

Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2 × 1) diamond surface

Beattie

Goss

Rayson

et al. 2019

J. Phys.: Condens. Matter

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Control over the chemical termination of diamond surfaces has shown great promise in the realization of field-emission applications, the selection of charge states of near-surface colourcentres such as NV, and the realisation of surface-conductive channels for electronic device applications. Experimental investigations of ultra-thin Si and Ge layers yield surface states both within the band-gap and resonant with the underlying diamond valence band. In this report, we report the results of density-functional simulations of a range of coverages of Si and Ge on diamond (0 0 1) surfaces. We have found that surface coverage with crystallogen:carbon ratios of 67% and 75% are more stable than both higher and lower coverages on the (0 0 1)-diamond surface, and that they can explain the observation of an occupied band around 1.7 eV below the valence band top. We also report geometries, adsorption energies and electron affinities of these surface structures, and show that the resonant state is made up from conventional spd-covalent σ-bonding orbitals between the surface adsorbates.

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Section: Discussionsupporting

confidence: 88%

Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2 × 1) diamond surface

Beattie

Goss

Rayson

et al. 2019

J. Phys.: Condens. Matter

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“…16) Despite the encouraging progress in the surface conductivity of diamond and related electronic devices, there is a problem of the necessity of hydrogen termination on diamond surface. Although the appearance of hydrogen on diamond induces a negative electron affinity, hydrogen also leads to the device instability 17) and poor adhesion between diamond and the surface acceptors. In addition, for the oxides acceptor, an additional capping insulator layer is required to protect the oxide layer and to reduce the leakage current.…”

mentioning

confidence: 99%

Generating robust two-dimensional hole gas at the interface between boron nitride and diamond

Gan

Zhang

et al. 2020

Jpn. J. Appl. Phys.

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We report on the generation of two-dimensional hole gas (2DHG) with robust stability at the interface of c-BN/diamond upon proper interface engineering without the requirement of hydrogen on diamond. The areal density of the 2DHG is as high as 9.85 × 1012 cm−2, and the hole mobility is as high as 924 cm2 V−1 s−1. The intrinsic electron-deficiency nature of the interfacial carbon–boron bonds and the directional charge transfer due to the type-II band alignment are indispensable factors that synergistically lead to the formation of 2DHG.

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Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

Schenk,

Griffin,

Tadich

et al. 2024

Adv Materials Inter

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A boron‐oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide B2O3 onto the hydrogen‐terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to 950 °C. The resulting termination is highly oriented and chemically homogeneous, although further optimization is required to increase the surface coverage beyond the 0.4 monolayer coverage achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond.

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Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces

Cited by 10 publications

References 45 publications

Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2 × 1) diamond surface

Structure and electron affinity of silicon and germanium terminated (0 0 1)-(2 × 1) diamond surface

Generating robust two-dimensional hole gas at the interface between boron nitride and diamond

Formation of a Boron‐Oxide Termination for the (100) Diamond Surface

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