Spin-Orbit Coupling in Two-Dimensional Electron and Hole Systems

Winkler, Roland; Papadakis, S. J.; Poortere, E. P. De; Shayegan, M.

doi:10.1007/3-540-44946-9_18

Cited by 94 publications

(174 citation statements)

References 55 publications

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“…It is by now well established that confinement in a nanostructure leads to a reduction in the g factor [5,6]-the subband confinement increases the energy gap, which is inversely proportional to g Ã − g 0 , where g Ã is the effective and g 0 the free electron g factor [5,8]. Surprisingly, experiments in InAs [9,10] and InSb [11,12] nanowires found g factors surpassing the corresponding bulk g factors by up to 40%.…”

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confidence: 99%

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Orbital Contributions to the Electron g Factor in Semiconductor Nanowires

Winkler¹,

Varjas²,

Skolasinski³

et al. 2017

Phys. Rev. Lett.

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Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value -contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an L • S coupling in higher subbands leads to an enhancement of the g-factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g-factors under magnetic field rotation allows for a straightforward experimental test of this theory.

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confidence: 99%

“…In a recent experiment with InAs nanowires g factors [27] more than three times larger than the bulk g factor (g Ã InAs ¼ −14.9 [5,28]) were measured [16]. Moreover, it was found that the g factor depends very strongly on the chemical potential μ tuned by the gate potential [29].…”

mentioning

confidence: 99%

Orbital Contributions to the Electron g Factor in Semiconductor Nanowires

Winkler¹,

Varjas²,

Skolasinski³

et al. 2017

Phys. Rev. Lett.

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“…Here the notations Γ 6 and Γ 8 refer to the irreducible representations of the corresponding bands under the T d group 60 and we still keep this notation even though the symmetry is lowered. The form and symmetry of the basis wave functions are also justified with microscopic local atomic orbitals, as discussed in details in Appendix A.…”

Section: Model Hamiltonian Of Anti-ferromagnetic Half-heusler Matmentioning

confidence: 99%

Model Hamiltonian and time reversal breaking topological phases of antiferromagnetic half-Heusler materials

Yan

Liu

2017

Phys. Rev. B

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In this work, we construct a generalized Kane model with a new coupling term between itinerant electron spins and local magnetic moments of anti-ferromagnetic ordering in order to describe the low energy effective physics in a large family of anti-ferromagnetic half-Heusler materials. Topological properties of this generalized Kane model is studied and a large variety of topological phases, including Dirac semimetal phase, Weyl semimetal phase, nodal line semimetal phase, type-B triple point semimetal phase, topological mirror (or glide) insulating phase and anti-ferromagnetic topological insulating phase, are identified in different parameter regions of our effective models. In particular, we find that the system is always driven into the anti-ferromagnetic topological insulator phase once a bulk band gap is open, irrespective of the magnetic moment direction, thus providing a robust realization of anti-ferromagentic topological insulators. Furthermore, we discuss the possible realization of these topological phases in realistic anti-ferromagnetic half-Heusler materials. Our effective model provides a basis for the future study of physical phenomena in this class of materials.

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“…Two-dimensional spin-orbit coupled systems are typically well described by spin-orbit interactions (SOIs) of Rashba and Dresselhaus types [1][2][3], which play an important role in many aspects of semiconductor physics, such as spin interferometer [4,5], persistent spin helix [6,7], and classical and quantum spin Hall effects [8][9][10][11][12][13]. SOI is closely related to interesting properties of materials yielding different kinds of topological orders, this ensures the presence of robust metallic edge states due to the impossibility for the system to interpolate between two phases with different topological orders without closing the gap.…”

Section: Introductionmentioning

confidence: 99%

First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

Marcelino

2017

Phys. Rev. B

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This paper considers a model consisting of a kinetic term, Rashba spin-orbit coupling and short-range Coulomb interaction at zero-temperature. The Coulomb interaction is decoupled by a mean-field approximation in the spin channel using field theory methods. The results feature a first-order phase transition for any finite value of the chemical potential and quantum criticality for vanishing chemical potential. The Hall conductivity is also computed using Kubo formula in a mean-field effective Hamiltonian. In the limit of infinite mass the kinetic term vanishes and all the phase transitions are of second order, in this case spontaneous symmetry breaking mechanism adds a ferromagnetic metallic phase to the system and features a zero-temperature quantization of the Hall conductivity in the insulating one.

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Spin-Orbit Coupling in Two-Dimensional Electron and Hole Systems

Cited by 94 publications

References 55 publications

Orbital Contributions to the Electron g Factor in Semiconductor Nanowires

Orbital Contributions to the Electron g Factor in Semiconductor Nanowires

Model Hamiltonian and time reversal breaking topological phases of antiferromagnetic half-Heusler materials

First- and second-order metal-insulator phase transitions and topological aspects of a Hubbard-Rashba system

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