Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes

Tanaka, Hideki; Iwasawa, Haruo; Wang, Daohai; Toyoda, Naoyuki; Aoki, Takashi; Yudasaka, Ichio; Matsuki, Yasuhiko; Shimoda, Tatsuya; Furusawa, Mitsuru

doi:10.1143/jjap.46.l886

Cited by 31 publications

(28 citation statements)

References 7 publications

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“…Decreased photoluminescence intensities for PMPS, DMPS and DPPS were observed upon doping, attributed to structural transition from the addition of PBr 3 and annealing at 300˚C. This characteristic has been previously explained by light-induced charge separation between polysilane units and P [17].…”

Section: Electronic and Optical Properties Of Thin Filmsmentioning

confidence: 57%

Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Nakagawa¹,

Oku²,

Suzuki³

et al. 2017

GSC

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Organic thin film solar cells are potential next generation solar cells. Many p-type semiconductors have been used in organic solar cells, but there have been far fewer reports involving n-type organic semiconductors. Developing new n-type organic semiconductors is therefore desirable. Polysilane thin films were spin-coated from solutions containing phosphorus (P), and the effects of P addition on film microstructures and electronic properties as n-type semiconductors were investigated. Microstructures of poly-methyl-phenylsilane (PMPS), dimethyl-polysilane (DMPS) and deca-phenyl-penta-silane (DPPS) thin films were investigated by X-ray diffraction and transmission electron microscopy. PMPS thin films doped with P (PMPS(P)) were amorphous upon annealing at 300˚C, while DMPS(P) and DPPS(P) thin films exhibited crystalline structures. PMPS(P) and DMPS(P) thin films exhibited decreased electrical resistances upon P doping. The energy gaps of PMPS(P), DMPS(P) and DPPS(P) were 3.5, 3.9 and 3.8 eV, respectively. Decreased photoluminescence intensities of PMPS, DMPS and DPPS were observed upon P doping. The desorption of phenyl and methyl groups from PMPS(P) thin films was observed from Raman scattering measurements. Solar cells containing polysilane(P)/poly[3-hexylthiophene] heterojunction structures were fabricated and exhibited photovoltaic behavior.

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Section: Electronic and Optical Properties Of Thin Filmsmentioning

confidence: 57%

Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Nakagawa¹,

Oku²,

Suzuki³

et al. 2017

GSC

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“…Amorphous silicon doped with boron or phosphorus would function as p-type or n-type semiconductor, respectively [10]. Energy levels would be different between PDPS with B and PDPS with P, and previously reported values were used for the energy levels [11,12].…”

Section: Resultsmentioning

confidence: 99%

“…In addition, there would be energy barrier at the semiconductor/metal interfaces as indicated by band bending in Figure 7, and heavy doping of B or P would reduce the contact resistance. The present PDPS-based solar cells were compared with other silicon-based solar cells [10,13,14] such as amorphous silicon solar cells prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and spin coating method, as listed in Table 2. The present solar cells fabricated by spin-coating have simple fabrication process and better cost performance.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of Poly[Decaphenylcyclopentasilane]-Based Solar Cells

Iwase¹,

Oku

Suzuki³

et al. 2012

AMPC

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Poly[decaphenylcyclopentasilane] (PDPS)-based photovoltaic cells were fabricated by using mixture solution of PDPS including boron and phosphorous elements. A doping effect of phosphorus and boron into PDPS was investigated on the performance of the photovoltaic devices. The solar cell provided short-circuit current density of 0.11 mA/cm 2 and open-circuit voltage of 0.81 V under simulated sunlight. Microstructural analysis indicated that PDPS had an amorphous structure, which would result in the photovoltaic properties.

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“…13 All manipulations were performed in a nitrogen-atmosphere glove box in which a tshimoda@jaist.ac.jp the water and oxygen concentrations were below 1 ppm. The white phosphorus (P 4 ) was added as a dopant to a glass vessel containing Si 5 H 10 at concentrations ranging from 0.01 to 3 wt%.…”

mentioning

confidence: 99%

“…Flat Si films for testing the success of P doping in the liquid-Si ink were prepared using the following procedures that were reported in the literature. 13 The liquid-Si ink was spin-coated on a 20-mm-square quartz substrate at 2 krpm for 30 s and was then annealed for 5 min on a hot plate at 400 • C. Next the film was annealed for 20 min in a rapid thermal annealing (RTA) furnace over a range from 400 to 800 • C under N 2 atmosphere. The concentrations of P in these flat Si film samples were measured with secondary-ion-mass spectroscopy (SIMS) using a cesium primary beam.…”

mentioning

confidence: 99%

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

et al. 2018

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Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10−3Ω ⋅ cm, which is comparable to the specific resistance of flat n-type poly-Si films.

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Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes

Cited by 31 publications

References 7 publications

Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Fabrication and Characterization of Poly[Decaphenylcyclopentasilane]-Based Solar Cells

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

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Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes

Cited by 31 publications

References 7 publications

Effects of PBr&lt;sub&gt;3&lt;/sub&gt; Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Effects of PBr&lt;sub&gt;3&lt;/sub&gt; Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Fabrication and Characterization of Poly[Decaphenylcyclopentasilane]-Based Solar Cells

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

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Product

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Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Effects of PBr<sub>3</sub> Addition to Polysilane Thin Films on Structures and Photovoltaic Properties