Spin-on diffused GaSb mesa photodiode with high breakdown voltages

Heinz, C.

doi:10.1049/el:19860190

Cited by 6 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The observed breakdown voltages are among the highest reported in literature. Similar breakdown voltages have been observed by Heinz [7] using a spin-on Zn source.…”

Section: Resultssupporting

confidence: 85%

See 1 more Smart Citation

Fabrication and passivation of GaSb photodiodes

Sridaran

Chavan

Dutta

2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The observed breakdown voltages are among the highest reported in literature. Similar breakdown voltages have been observed by Heinz [7] using a spin-on Zn source.…”

Section: Resultssupporting

confidence: 85%

“…Formation of p-n junction by Zn diffusion from vapor source always results in highly doped p-region [5,6]. Heinz [7] has demonstrated a low doped p-region (5 Â 10 15 cm À3 ) by Zn diffusion from spin-on solid source.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and passivation of GaSb photodiodes

Sridaran

Chavan

Dutta

2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…However, zinc diffusion in n-GaSb ͑Te doped: 3ϫ10 17 cm Ϫ3 ͒ at 680°C for 4 h in flowing N 2 has led to breakdown voltages of 20-30 V with a wide p-type region of acceptor concentration of 5ϫ10 15 cm Ϫ3 . 315 The occurrence of the large width of this region may be due to reduction in native defects in undoped GaSb at high temperatures (у600°C), resulting in high resistivity of the material. Such situations have been encountered during MBE growth of GaSb at 600°C, 316 and during LPE growth from Sb-rich solution.…”

Section: Homojunctionsmentioning

confidence: 99%

The physics and technology of gallium antimonide: An emerging optoelectronic material

Dutta

Bhat

Kumar

1997

Journal of Applied Physics

665

396

View full text Add to dashboard Cite

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 m. The III-V ternaries and quaternaries ͑AlGaIn͒͑AsSb͒ lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication.

show abstract

“…The use of gallium antimonide (GaSb) substrates is highly desirable for the manufacturing of photodetectors (Fraas et al 1989, Heinz 1986) and tunnel diodes (Kyuregyan and Stuchebnikov 1971). One of the problems in obtaining high quality gallium antimonide substrates is the relatively high defect generation that takes place in ampoule grown gallium antimonide material.…”

Section: Introductionmentioning

confidence: 99%

Brief communication. Reduction of dislocation density by thermal annealing of (100) gallium antimonide substrates

Heinz¹

1993

International Journal of Electronics

View full text Add to dashboard Cite

Brief communicationReduction of dislocation density by thermal annealing of (100) gallium antimonide substrates CHRISTIAN HEINZtPost growth thermal annealing has been used to reduce the dislocation density of (100) gallium antimonide substrates. The dislocation density was reduced by about 50%. Etch pit densities of 120Oe.p.~m-~ have been obtained. The reduction of dislocations may be due to the annihilation and coalescence of dislocations by enhanced dislocation movement under thermal stress.

show abstract

Spin-on diffused GaSb mesa photodiode with high breakdown voltages

Cited by 6 publications

References 0 publications

Fabrication and passivation of GaSb photodiodes

Fabrication and passivation of GaSb photodiodes

The physics and technology of gallium antimonide: An emerging optoelectronic material

Brief communication. Reduction of dislocation density by thermal annealing of (100) gallium antimonide substrates

Contact Info

Product

Resources

About