Brief communication. Reduction of dislocation density by thermal annealing of (100) gallium antimonide substrates

Heinz, C.

doi:10.1080/00207219308907106

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…30 We developed several etch chemistries containing H 3 PO 4 acid, as listed in Table I 31 The oval shape of these etch pits may be due to coalescence of adjacent defects. The reaction with GaSb may take place as follows:…”

Section: Resultsmentioning

confidence: 99%

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

Kutty

Plis

Khoshakhlagh

et al. 2010

Journal of Elec Materi

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We report on the comparison of mesa sidewall profiles of InAs/GaSb strainedlayer superlattice (SLS) detector structures (k 50% cutoff % 14 lm at V bias = 0 V and T = 30 K) obtained after (a) a conventional BCl 3 -based inductively coupled plasma etch, (b) a chemical etch (H 2 O 2 :HCl:H 2 O, 1:1:4), and (c) a combination of both etches. We found that the smoothest sidewall profile with reasonable undercut ($5 lm) was obtained after chemical etch only. The chemical etch was optimized primarily using an n-type GaSb substrate. During this process, numerous chemical etchants were examined. GaSb n-type substrates were chosen for this study in preference over InAs substrates due to their high chemical reactivity and the complicated composition of the native oxide. In addition, SLS detectors are usually grown on GaSb substrates and, after hybridization of the focal-plane array to the readout integrated circuit, the GaSb substrate is etched away using a combination of wet and dry etching techniques. We found that H 2 O 2 :HCl:H 2 O (1:1:4) etching solution provided the smoothest etched surface of GaSb, with a root-meansquare roughness of 1.59 nm.

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Section: Resultsmentioning

confidence: 99%