2001
DOI: 10.1088/0268-1242/16/4/201
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Spin interactions in diluted magnetic semiconductors and magnetic semiconductor structures

Abstract: The spin-dependent interactions in diluted magnetic semiconductors are reviewed. The non-trivial dependence of the p-d and the d-d exchange interactions, which rule the magnetic properties of these materials, on the electronic configuration of the magnetic ions is presented. Depending on the occupation numbers in the ionic d shell and the position of the d level with respect to the bands, both the kinetic exchange and the superexchange can lead to antiferromagnetic, ferromagnetic Kondo-like interactions or eve… Show more

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Cited by 213 publications
(195 citation statements)
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“…Most analyses of dopant-carrier magnetic exchange in quantum-confined DMSs have relied on methods developed to describe the corresponding bulk materials. [1][2][3][32][33][34][35][36] Whereas the general features of sp-d exchange appear to translate across length scales, specific contrasts have been emphasized in some cases. 12,13,[36][37][38][39][40] Most prominently, a strong quantum-confinement-induced change in the fundamental nature of the conduction-band-electron ( e CB − ) -Mn 2+ exchange (s-d exchange) interaction has been described both theoretically 36,37 and experimentally.…”
Section: Introductionmentioning
confidence: 99%
“…Most analyses of dopant-carrier magnetic exchange in quantum-confined DMSs have relied on methods developed to describe the corresponding bulk materials. [1][2][3][32][33][34][35][36] Whereas the general features of sp-d exchange appear to translate across length scales, specific contrasts have been emphasized in some cases. 12,13,[36][37][38][39][40] Most prominently, a strong quantum-confinement-induced change in the fundamental nature of the conduction-band-electron ( e CB − ) -Mn 2+ exchange (s-d exchange) interaction has been described both theoretically 36,37 and experimentally.…”
Section: Introductionmentioning
confidence: 99%
“…Diluted magnetic semiconductors are advanced materials for magneto--electronics due to the possibility of the control of magnetic properties by modulation of the carrier density [1][2][3]. Cr-based diluted magnetic semiconductors are also promising materials for new optoelectronic devices e.g.…”
Section: Introductionmentioning
confidence: 99%
“…tunable mid-infrared lasers (CdSe:Cr, ZnSe:Cr, CdMnTe:Cr [4]), converters of red-green into blue light [5]. The observed ferromagnetic p−d exchange interactions in zinc chalcogenides recommends them as the material for spintronics as well [2,6,7]. EPR investigations of the chromium in these crystals reveals this dopant in Cr 2+ state [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…However, shallow acceptors will produce band holes only if the d N +1 /d N donor level resides at lower energies, that is in the valence band. Furthermore, except for some resonant situations, the magnitudes of |βN 0 | are small for N < 5 because of opposite signs of two relevant contributions [141]. With these arguments in mind, (Ga,Fe)N and (Ga,Co)N co-doped with acceptor impurities appear as promising materials [43,68].…”
Section: Beyond Mn-based Compoundsmentioning
confidence: 99%