Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

Nakayama, Hiroyasu; Althammer, Matthias; Chen, Y.-T.; Uchida, K.; Kajiwara, Y.; Kikuchi, Daisuke; Ohtani, Toshiro; Geprägs, Stephan; Opel, Matthias; Takahashi, Saburo; Gross, Rudolf; Bauer, G.; Goennenwein, Sebastian T. B.; Saitoh, Eiji

doi:10.1103/physrevlett.110.206601

Cited by 973 publications

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“…[6][7][8] Recently, Weiler et al 9 and Huang et al 10 observed magnetoresistance (MR) effects in Pt on YIG and related those effects to magnetic proximity. These MR effects have been further investigated by Nakayama et al 11 and they found and explained a new magnetoresistance, called spin-Hall magnetoresistance (SMR). 11,12 A change in resistance due to SMR can be explained by a combination of the SHE and the ISHE, acting simultaneously.…”

Section: Introductionmentioning

confidence: 95%

“…These MR effects have been further investigated by Nakayama et al 11 and they found and explained a new magnetoresistance, called spin-Hall magnetoresistance (SMR). 11,12 A change in resistance due to SMR can be explained by a combination of the SHE and the ISHE, acting simultaneously. When a charge current J e is sent through a Pt strip, a transverse spin current J s is generated by the SHE following J e ∝ σ × J s , [13][14][15][16] where σ is the polarization direction of the spin current.…”

Section: Introductionmentioning

confidence: 95%

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Spin-Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

et al. 2013

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Spin-Hall magnetoresistance in platinum on yttrium iron garnet Vlietstra, N.; Shan, J.; Castel, V.; van Wees, B. J.; Ben Youssef, J. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. The occurrence of spin-Hall magnetoresistance (SMR) in platinum (Pt) on top of yttrium iron garnet (YIG) has been investigated, for both in-plane and out-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8, and 35 nm]. Our experiments show that the SMR signal directly depends on the in-plane and out-of-plane magnetization directions of the YIG. This confirms the theoretical description, where the SMR occurs due to the interplay of the spin-orbit interaction in the Pt and the spin-mixing conductance at the YIG/Pt interface. Additionally, the sensitivity of the SMR and spin pumping signals on the YIG/Pt interface conditions is shown by comparing two different deposition techniques (e-beam evaporation and dc sputtering).

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 95%

Spin-Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

et al. 2013

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“…We have disregarded the imaginary part of the spin-mixing conductance in accordance with Refs. [14,32]. Notice that for α = 0 • , the R NL for the case without FMI [24,28,29] is recovered:…”

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“…One could take advantage of the spin-mixing conductance concept [5,6] at nonmagnetic metal (NM)/ferromagnetic insulator (FMI) interfaces, which governs the interaction between the spin currents present at the NM and the magnetization of the FMI. This concept is the basis of new spindependent phenomena, including spin pumping [6][7][8][9][10][11][12], spin Seebeck effect [6,13], and spin Hall magnetoresistance (SMR) [6,[14][15][16][17][18]. In these cases, a NM with large spin-orbit coupling is required to convert the involved spin currents into charge currents via the inverse spin Hall effect [19].…”

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Modulation of pure spin currents with a ferromagnetic insulator

et al. 2015

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We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y 3 Fe 5 O 12 (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the nonlocal resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the solution of the spin-diffusion equation Spintronics is a rapidly growing field that aims at using and manipulating not only the charge, but also the spin of the electron, which could lead to faster data processing, nonvolatility, and lower electrical power consumption as compared to conventional electronics [1]. Sophisticated applications such as hard-disk read heads and magnetic random access memory (MRAM) have been introduced in the last two decades.Further progress could be achieved with pure spin currents, which are an essential ingredient in an envisioned spin-only circuit that would integrate logics and memory [2]. The most basic unit in such a concept is the spin analog to the transistor, in which the manipulation of pure spin currents is crucial. The original proposal by Datta and Das [3], which is also applicable to pure spin currents [4], suggested a spin manipulation that would arise from the spin precession due to the spin-orbit interaction modulated by an electric field (Rashba coupling). However, a fundamental limitation appears here, because the best materials for spin transport are those showing the lowest spin-orbit interaction and, therefore, there has been no success in electrically manipulating the spins and propagating them at the same environment, with few exceptions [4].Alternative ways to control pure spin currents are thus desirable. One could take advantage of the spin-mixing conductance concept [5,6] at nonmagnetic metal (NM)/ferromagnetic insulator (FMI) interfaces, which governs the interaction between the spin currents present at the NM and the magnetization of the FMI. This concept is the basis of new spindependent phenomena, including spin pumping [6][7][8][9][10][11][12], spin Seebeck effect [6,13], and spin Hall magnetoresistance (SMR) [6,[14][15][16][17][18]. In these cases, a NM with large spin-orbit coupling is required to convert the involved spin currents into charge currents via the inverse spin Hall effect [19].In this Rapid Communication, we demonstrate an alternative way of modulating pure spin currents based on a magnetic, instead of electric, gating. To that end, we use lateral spin valves (LSVs). These devices allow an electrical injection and detection of pure spin currents in a NM channel by using * f.casanova@nanogune.eu ferromagnetic (FM) electrodes in a nonlocal configuration [20][21][22][23][24][25][26][27][28][29]. The LSVs have been fabricated on top of a FMI, in order to enab...

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Spin‐Orbit Torque (SOT) Materials and Devices

Edmonds

Wang

2022

Spintronics

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Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

Cited by 973 publications

References 35 publications

Spin-Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

Spin-Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

Modulation of pure spin currents with a ferromagnetic insulator

Spin‐Orbit Torque (SOT) Materials and Devices

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