Spin generation in completely MBE-grown 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mrow><mml:mi>FeSi</mml:mi><mml:mo>/</mml:mo><mml:mi>MgO</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:mrow></mml:mrow></mml:math>
 lateral spin valves

Hoffmann, Georg; Herfort, J.; Ramsteiner, M.

doi:10.1103/physrevmaterials.3.074402

Cited by 5 publications

(4 citation statements)

References 59 publications

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“…Mitigation of this effect is an ongoing effort. Further, although there has been some exploration of using non-ferromagnetic materials for spintronic applications [52], this research avenue is still nascent, especially in context of spin injection utilizing Heusler compounds [53][54][55][56][57]. This motivates further study of interfaces between semiconductors and lattice matched Heusler compounds, especially those with high Fermi-level spin polarization.…”

Section: Introductionmentioning

confidence: 99%

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Heischmidt¹,

Yu²,

Dardzinski³

et al. 2022

Preprint

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We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti2MnIn and Ni2MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard U correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 µB are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti2MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni2MnIn induces in the InAs. This is explained by the position of the transition metal d states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

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Section: Introductionmentioning

confidence: 99%

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Heischmidt¹,

Yu²,

Dardzinski³

et al. 2022

Preprint

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“…Using a general X 2 YZ chemical formula, where X and Y denote transition metals while Z denotes one of the main-group elements, most of half-metallic alloys belong to wide Co 2 YZ group 4 , 12 with half-metallicity and high Curie temperature 4 , 13 . Co 2 YZ Heusler alloys are widely used in various spintronic applications, like tunnel magnetoresistance devices 14 , 15 , current-perpendicular-to-plane giant magnetoresistance devices 16 – 28 , lateral spin-valves 29 – 31 and spin injectors into semiconductors 9 , 32 , 33 . The last studies also revealed topological semimetal properties in such materials 34 .…”

Section: Introductionmentioning

confidence: 99%

“…The last studies also revealed topological semimetal properties in such materials 34 . Up to now Co 2 YZ Heusler alloys remain among the ones of greatest research interest 6 , 10 , 31 , 34 – 46 .…”

Section: Introductionmentioning

confidence: 99%

Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

Chumak

Pacewicz

Lynnyk

et al. 2021

Sci Rep

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Co2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are among the most promising thin film materials for spintronic devices due to a high spin polarization, low magnetic damping and giant/tunneling magnetoresistance ratios. Despite numerous investigations of Heusler alloys magnetic properties performed up to now, magnetoelastic effects in these materials remain not fully understood; due to quite rare studies of correlations between magnetoelastic and other magnetic properties, such as magnetic dissipation or magnetic anisotropy. In this research we have investigated epitaxial CFMS and CFGG Heusler alloys thin films of thickness in the range of 15–50 nm. We have determined the magnetoelastic tensor components and magnetic damping parameters as a function of the magnetic layer thickness. Magnetic damping measurements revealed the existence of non-Gilbert dissipation related contributions, including two-magnon scattering and spin pumping phenomena. Magnetoelastic constant B11 values and the effective magnetic damping parameter αeff values were found to be in the range of − 6 to 30 × 106 erg/cm3 and between 1 and 12 × 10–3, respectively. The values of saturation magnetostriction λS for CFMS Heusler alloy thin films were also obtained using the strain modulated ferromagnetic resonance technique. The correlation between αeff and B11, depending on magnetic layer thickness was determined based on the performed investigations of the above mentioned magnetic properties.

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“…11) Moreover, the MgO interlayer enhances the spin injection efficiency due to its spin filtering effects 3,12) and it also suppresses the diffusion of atoms between CoFeB and GaAs. 13) On the other hand, the junction resistance increases exponentially with the thickness of MgO, 14,15) which degrades device characteristics, such as magnetoresistance, transconductance, and current-drive capability. Thus, in the CoFeB/MgO system, obtaining low junction resistance may not be compatible with keeping PMA with sufficient thermal stability.…”

mentioning

confidence: 99%

Effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit-torque induced magnetization switching

Ogawa

Hara

Hasebe

et al. 2023

Appl. Phys. Express

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We investigated the effect of ultrathin Fe interlayer on the growth of MnGa and spin-orbit torque (SOT) induced magnetization switching. MnGa was epitaxially grown on Fe at room temperature without thermal annealing. The MnGa/Fe bilayer was perpendicularly magnetized, and clear magnetization switching of MnGa/Fe bilayer using the spin current mainly from the adjacent Ta was observed. The insertion of Fe layer reduced the switching current density and increased the SOT-originated effective magnetic field. These results indicate that MnGa/Fe bilayer is a promising spin source, capable of both perpendicular spin injection into GaAs and electrical manipulation of its spin direction.

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Spin generation in completely MBE-grown Co2FeSi/MgO/GaAs lateral spin valves

Cited by 5 publications

References 59 publications

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

Effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit-torque induced magnetization switching

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