2017
DOI: 10.1103/physrevb.95.104418
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Spin-flop transition in the easy-plane antiferromagnet nickel oxide

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Cited by 77 publications
(54 citation statements)
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“…Our phenomenological model also shows that spin-flops accompany orbitalflops due to strong spin-orbit coupling. The spin-flops in CeSb is induced by rotating magnetic field and differs from the classic spin-flops widely observed in antiferromagnets [36,37,[45][46][47][48].…”
Section: Discussionmentioning
confidence: 67%
“…Our phenomenological model also shows that spin-flops accompany orbitalflops due to strong spin-orbit coupling. The spin-flops in CeSb is induced by rotating magnetic field and differs from the classic spin-flops widely observed in antiferromagnets [36,37,[45][46][47][48].…”
Section: Discussionmentioning
confidence: 67%
“…1,2 In recent years, NiO attracted much attention as an antiferromagnetic (AF) insulator material for spintronic devices. [3][4][5][6][7][8][9][10][11] Understanding the spin-phonon coupling in NiO is a key to its functionalization and enabling AF spintronics' promise of ultra-high-speed and low-power dissipation. 12,13 The use of spin currents in spintronic devices instead of charge currents in electronic devices is advantageous for ultra-low energy dissipation.…”
mentioning
confidence: 99%
“…12,13 NiO occupies a special role among spintronic AF insulator materials. [4][5][6][7][8][9] Its high N eel temperature, T N ¼ 523 K, allows for device operation in the AF state at room temperature (RT) and above. The demonstrated coherent THz control of AF spin waves suggests a possibility of ultra-high speed operation of NiO spintronic devices.…”
mentioning
confidence: 99%
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“…Note that ω α ω β and hence α (β) labels the upper (lower) mode. Whereas ω α increases with the magnetic field, ω β decreases and goes to zero at the onset of the spin-flop phase at ω H = ω SF ≈ 2ω E ω [57].…”
mentioning
confidence: 98%