2020
DOI: 10.1021/acsami.0c16385
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Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

Abstract: As nanoelectronic synapses, memristive ferroelectric tunnel junctions (FTJs) have triggered great interest due to the potential applications in neuromorphic computing for emulating biological brains. Here, we demonstrate multiferroic FTJ synapses based on the ferroelectric modulation of spin-filtering BaTiO3/CoFe2O4 composite barriers. Continuous conductance change with an ON/OFF current ratio of ∼54 400% and long-term memory with the spike-timing-dependent plasticity (STDP) of synaptic weight for Hebbian lear… Show more

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Cited by 43 publications
(34 citation statements)
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“…While PCM and ReRAM technologies have been widely used in neuromorphic systems in the past years [78], ferroelectric technology has only recently been investigated for these applications [15]. The systems reported are mainly at simulation level, for both FTJs [34,35,37] and FeFETs [57,[79][80][81][82].…”
Section: Discussionmentioning
confidence: 99%
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“…While PCM and ReRAM technologies have been widely used in neuromorphic systems in the past years [78], ferroelectric technology has only recently been investigated for these applications [15]. The systems reported are mainly at simulation level, for both FTJs [34,35,37] and FeFETs [57,[79][80][81][82].…”
Section: Discussionmentioning
confidence: 99%
“…The closer in time the two spikes are, the higher the weight change. Simulations using FTJ-based synapses and an STDP-based learning showed network accuracy for pattern classification >96% for a custom set of letters [34], whereas when standard Modified National Institute of Standards and Technology (MNIST) database is used, accuracy between 92.8% [37] and 97.3% [35] are reported. A hardware demonstration of a 3 × 3 pattern on a crossbar was shown in [38].…”
Section: Ftj Devices For Neuromorphic Computingmentioning
confidence: 98%
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“…Notably, the polarization switching can induce not only the magnitude change but also the sign reversal of photoresponse 19,21 , enabling a single FE-PS to represent both positive and negative weights and hence reducing the hardware overhead for network construction. Moreover, the nonvolativity, high controllability, and ultrafast switching kinetics (<1 ns) of polarization as demonstrated in various ferroelectric memory and neuromorphic devices [29][30][31][32][33][34] , along with the intimate coupling between polarization and photoresponse 35 , endow the FE-PS with good reliability and high write speed. Also noteworthy are the high photosensitivity and ultrashort photoresponse time (<1 ns) of FE-PS 24,25 , allowing a high-speed readout.…”
Section: Introductionmentioning
confidence: 99%