2021
DOI: 10.21203/rs.3.rs-969097/v1
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Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision

Abstract: Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET). The FE-PS-NET, constituted by ferroelectric photosensors (FE-PSs) with tunable photoresponsivities, is capable of simultaneously capturing and processing images. In each FE-PS… Show more

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Cited by 5 publications
(5 citation statements)
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“…For the classification to these letters, as depicted in Fig. 5e, a simple neural network is built by multiply-accumulate circuits (MAC) 47,48 , where structure of circuit is shown in Supplementary Fig. S14, since the drain current is linear in the measured range (−20V to 20 V) of drain voltage under the light illumination (Supplementary Fig.…”
Section: Ppf =mentioning
confidence: 99%
“…For the classification to these letters, as depicted in Fig. 5e, a simple neural network is built by multiply-accumulate circuits (MAC) 47,48 , where structure of circuit is shown in Supplementary Fig. S14, since the drain current is linear in the measured range (−20V to 20 V) of drain voltage under the light illumination (Supplementary Fig.…”
Section: Ppf =mentioning
confidence: 99%
“…To address this issue, researchers have developed retina-inspired devices based on bulk materials and two-dimensional (2D) materials, such as variable-sensitivity photodetectors (VSDP) 6, 7 , dual-gate photodiodes (DGP) 8,9 , two-terminal photo-memories (TPM) [10][11][12][13][14] , and gate-tunable vision sensors (GVS) [15][16][17][18][19][20][21][22] . However, these neural network sensors often suffer from bias-dependent dark current with high power consumption (VSDP), volatile photocurrent for neural network (TPM), or complicated preparation process for integration and low photoresponsivity (DGP, GVS).…”
Section: Introductionmentioning
confidence: 99%
“…The recent discovery of the ferroelectric properties in hafnia composites (Böscke et al, 2011), a material already present in CMOS technology, has attracted further scientific interest in the field of neuromorphic hardware based on ferroelectrics. Three main classes of devices exploiting ferroelectricity for synaptic as well as neuronal functionalities were demonstrated in the past: the twoterminal Ferroelectric Tunneling Junctions (FTJs) (Ambriz-Vargas et al, 2017;Tian and Toriumi, 2017;Chen et al, 2018a;Goh and Jeon, 2018;Yu et al, 2021), the threeterminal Ferroelectric Field-Effect Transistors (FeFETs) (Mulaosmanovic et al, 2017;Sharma et al, 2017;Krivokapic et al, 2018;Zeng et al, 2018;Mo et al, 2019) and the twoterminal Ferroelectric Photovoltaic (FePv) synapses (Cheng et al, 2020;Cui et al, 2021). Although, both FTJs and FeFETs have been extensively investigated recently, showing large dynamic ranges, low energy dissipation, and synaptic functions including short and long term plasticity as well as Spike-Timing-Dependent Plasticity (STDP) (Nishitani et al, 2012;Boyn et al, 2017;Chen et al, 2018a;Guo et al, 2018;Majumdar et al, 2019;Li et al, 2020) the FePv devices, based on the polarization control of the photovoltaic behavior that exploit the photoresponsivity as synaptic weight, were used for binary data storage (Guo et al, 2013) and recently as prototype synapse (Cheng et al, 2020).…”
Section: Introductionmentioning
confidence: 99%