“…The recent discovery of the ferroelectric properties in hafnia composites (Böscke et al, 2011), a material already present in CMOS technology, has attracted further scientific interest in the field of neuromorphic hardware based on ferroelectrics. Three main classes of devices exploiting ferroelectricity for synaptic as well as neuronal functionalities were demonstrated in the past: the twoterminal Ferroelectric Tunneling Junctions (FTJs) (Ambriz-Vargas et al, 2017;Tian and Toriumi, 2017;Chen et al, 2018a;Goh and Jeon, 2018;Yu et al, 2021), the threeterminal Ferroelectric Field-Effect Transistors (FeFETs) (Mulaosmanovic et al, 2017;Sharma et al, 2017;Krivokapic et al, 2018;Zeng et al, 2018;Mo et al, 2019) and the twoterminal Ferroelectric Photovoltaic (FePv) synapses (Cheng et al, 2020;Cui et al, 2021). Although, both FTJs and FeFETs have been extensively investigated recently, showing large dynamic ranges, low energy dissipation, and synaptic functions including short and long term plasticity as well as Spike-Timing-Dependent Plasticity (STDP) (Nishitani et al, 2012;Boyn et al, 2017;Chen et al, 2018a;Guo et al, 2018;Majumdar et al, 2019;Li et al, 2020) the FePv devices, based on the polarization control of the photovoltaic behavior that exploit the photoresponsivity as synaptic weight, were used for binary data storage (Guo et al, 2013) and recently as prototype synapse (Cheng et al, 2020).…”