Spin field effect transistors and their applications: A survey

Malik, Gul Faroz A.; Kharadi, Mubashir A.; Khanday, Farooq Ahmad; Parveen, Nusrat

doi:10.1016/j.mejo.2020.104924

Cited by 19 publications

(7 citation statements)

References 200 publications

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“…The Spin-FET was theoretically predicted over 30 years ago [163] (for relevant reviews see, e.g. [56,[164][165][166]). This particular type of transistor uses the spin properties of electrons for switching.…”

Section: Spin Field-effect Transistors (Spin-fets)mentioning

confidence: 99%

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A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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Section: Spin Field-effect Transistors (Spin-fets)mentioning

confidence: 99%

“…cobalt) as well as multigate and multi-functional logic devices and systems (for recent reviews see, e.g. [165,166]).…”

Section: Spin Field-effect Transistors (Spin-fets)mentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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“…166 Based on experimental results CrO 2 is reported to show the best half metallic behaviour. 167 Hydrogenation is used to make silicene a wide-bandgap material. It is shown that the device can achieve a TMR value of 96% which is significantly higher than pristine counterpart.…”

Section: Kharadi Et Al Have Proposed An Mtj Based On Hydrogenatedmentioning

confidence: 99%

Review—Silicene: From Material to Device Applications

Kharadi

Malik

Khanday

et al. 2020

ECS J. Solid State Sci. Technol.

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During the last decade, there has been considerable interest of researchers towards the use of two-dimensional (2D) materials for the electronic device implementations. The main driving force is the improved performance offered by these 2D materials for electronic device operation in nano-scale regime. Among these 2D material, silicene (the 2D of silicon) has emerged as preferred choice because of its expected integration with silicon based technology. This expected integration of silicene with silicon technology is one of the primary advantages of silicene as a material for future electronic devices with the availability of infrastructure of bulk silicon for its processing. Silicene in its basic form is a conductor due to the zero bandgap formation and therefore several techniques have been given in the open literature for forming the band gap in silicene. Besides, silicene has been used to design several electronic devices ranging from transistors to photodetectors. In this paper, a review of silicene is presented considering a) the features/properties offered by it, b) the methods employed for the generation of its bandgap, c) different types of field effect transistors (FETs) reported on silicene, and d) spintronic applications of silicene.

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“…Herein, the resistance of the material exhibits signicant change due to the application of the external magnetic eld. 10,11 So far, different devices based on spintronic phenomena have been fabricated as spin photodiodes, 12,13 spin eld-effect transistors, 14,15 and spin LED. 16,17 The development of spintronics has been extended past Moore's law.…”

Section: Introductionmentioning

confidence: 99%