Spin-Dependent Tunneling of Holes in Heterostructures Based on GaMnAs Semiconductor: Effects of Temperature and Quantum Size

This paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1-x)MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temperature and the size of the (DMS) layers was discussed. The diluted magnetic layers Ga(1-x)MnxAs behave as barriers for spin-up holes and quantum wells for spin-down holes. Furthermore, we have addressed the impact of an applied bias voltage and the temperature on the variation of the spin-polarization and spin current densities. Our findings reveal that the transmission coefficients present an oscillating behavior due to the resonant states and strongly depend on the temperature of the system and the number of magnetic layers. Furthermore, the obtained results demonstrated that the number of these states is multiplied by augmenting the magnetic layers. Moreover, we demonstrate that the asymmetric structure presents a completely different transmission of holes than the symmetric structure. Furthermore, the negative differential resistance (NDR) is demonstrated in the current density variations. Especially, this (NDR) was more intense for spin-up holes than spin-down holes. The findings in the present paper can be useful in manufacturing spin-filters by adjusting the values of the temperature and the external voltages.

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“…As stated by the Tsu-Esaki formalism [27,28], the current density will be deduced by integrating over the longitudinal energy E.…”

Section: Theoretical Methodsmentioning

confidence: 99%