Spin-polarized transmission across heterostructure based on an InAs/GaSb/InGaAs system: Effect of accelerating quantum wells

This paper has studied the electronic properties of multi-diluted magnetic semiconductor (DMS) layers Ga(1-x)MnxAs interposed between nonmagnetic GaAs layers. The asymmetry of confining potential on the transmission coefficient by tuning the temperature and the size of the (DMS) layers was discussed. The diluted magnetic layers Ga(1-x)MnxAs behave as barriers for spin-up holes and quantum wells for spin-down holes. Furthermore, we have addressed the impact of an applied bias voltage and the temperature on the variation of the spin-polarization and spin current densities. Our findings reveal that the transmission coefficients present an oscillating behavior due to the resonant states and strongly depend on the temperature of the system and the number of magnetic layers. Furthermore, the obtained results demonstrated that the number of these states is multiplied by augmenting the magnetic layers. Moreover, we demonstrate that the asymmetric structure presents a completely different transmission of holes than the symmetric structure. Furthermore, the negative differential resistance (NDR) is demonstrated in the current density variations. Especially, this (NDR) was more intense for spin-up holes than spin-down holes. The findings in the present paper can be useful in manufacturing spin-filters by adjusting the values of the temperature and the external voltages.

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“…Once the transmission coefficient is evaluated, we calculated the spin polarization, defined as follows [24][25][26]:…”

Section: Theoretical Methodsmentioning

confidence: 99%

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Al-Shameri

Dakhlaoui

2022

Coatings

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Combustion derived color tunable Sm3+ activated BaLaAlO4 nanocrystals for various innovative solid state illuminants

Sehrawat

Khatkar

Boora

et al. 2020

Chemical Physics Letters

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Pressure effect on spin-resonant tunneling of holes in CdTe/Cd1-xMnxTe double-barrier heterostructure

Pushpitha

Thirumalai

2022

Physica B: Condensed Matter

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Spin-polarized transmission across heterostructure based on an InAs/GaSb/InGaAs system: Effect of accelerating quantum wells

Cited by 5 publications

References 34 publications

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Spin-Current Oscillations in Diluted Magnetic Semiconductor Multibarrier GaMnAs/GaAs: Role of Temperature and Bias Voltage

Combustion derived color tunable Sm3+ activated BaLaAlO4 nanocrystals for various innovative solid state illuminants

Pressure effect on spin-resonant tunneling of holes in CdTe/Cd1-xMnxTe double-barrier heterostructure

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