Spin-dependent resonant tunneling and magnetoresistance in Ni/graphene/h-BN/graphene/Ni van der Waals heterostructures

Qiu, Weicheng; Peng, Junping; Pan, Mengchun; Hu, Yueguo; Ji, Minhui; Hu, Jiafei; Tian, Wugang; Chen, Dixiang; Zhang, Qi; Li, Peisen

doi:10.1016/j.jmmm.2018.12.065

Cited by 13 publications

(8 citation statements)

References 18 publications

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“…This is probably due to the orbital hybridization of the C and Ni atoms [30,34]. This strong orbital hybridization between graphene and Ni atoms is generally considered to be the main reason for the perfect spin filtering of the graphene/Ni (111) interface, as previously studied [35,36]. Hence, the full-covered, clean, epitaxial and strong coupling graphene/Ni (111) interface prepared by our method will be a highlight for graphene spintronics.…”

Section: Resultsmentioning

confidence: 52%

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

et al. 2021

Nanomaterials

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The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

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Section: Resultsmentioning

confidence: 52%

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

et al. 2021

Nanomaterials

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“…More details can be found in our previous reports. 7 After geometry optimization, the total energies of the different interfacial structures were calculated by the local spin density approximation (LSDA) of DFT. The interfacial binding energies were extracted by subtraction between the total energy of the decoupling interface and the coupling interface.…”

Section: Resultsmentioning

confidence: 99%

Thickness-Controlled Growth of Multilayer Graphene on Ni(111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

Qiu

Guo

Zhang

et al. 2023

ACS Appl. Nano Mater.

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Thickness-controlled multilayer graphene has been attracting wide interest in electronic and spintronic devices due to its tunable electronic structure and spin transport properties. In particular, the strong spin filtering effect in a lattice-matched Ni(111)/multilayer graphene heterostructure provides an ideal platform for developing high-performance spin valves and magnetic tunnel junctions. However, the thickness-controlled synthesis of multilayer graphene on Ni(111) substrates is still a large challenge, which seriously restricts the development of graphene spintronic devices. Here, we report an approximate equilibrium segregation method for large-area multilayer graphene films on Ni(111) substrates by regulating the growth process of carbon dissolution and segregation. The uniformity and coverage of multilayer graphene films are controlled precisely in an atmospheric tube furnace system by modulating the Ni film thickness, gas atmosphere, and cooling rate. Characterization results systematically confirm the production of high-coverage, high-quality multilayer graphene on Ni(111) substrates. This work provides a reliable method for the controllable fabrication of multilayer graphene on single-crystal ferromagnetic substrates, which would contribute to the application of graphene spintronic devices.

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“…Such conclusion has great impact on the h-BN integration pathway. Begin with the theoretical works, Qiu et al, 162 proposed an effective method to control the spin current in a vertical MTJ by combining the strong spin filtering effect of graphene/ferromagnet interface with the resonant tunneling effect of graphene/h-BN/graphene vdW heterostructure, in which Ni( 111) is used as electrodes. Their theoretical results reveal that when the electronic spectra of spin electrons in two graphene layers are aligned, the spin resonance would appear which results in a negative differential resistance (NDR) effect.…”

Section: Targeting Effective Spin-injectionmentioning

confidence: 99%

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Zhang

Zhou

et al. 2021

Applied Physics Reviews

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As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of twodimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs.

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Spin-dependent resonant tunneling and magnetoresistance in Ni/graphene/h-BN/graphene/Ni van der Waals heterostructures

Cited by 13 publications

References 18 publications

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Thickness-Controlled Growth of Multilayer Graphene on Ni(111) Using an Approximate Equilibrium Segregation Method for Applications in Spintronic Devices

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

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