Spin-dependent phenomena in semiconductors in strong electric fields

Golub, L. E.; Ivchenko, E. L.

doi:10.1088/1367-2630/15/12/125003

Cited by 15 publications

(26 citation statements)

References 25 publications

(43 reference statements)

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“…The current-induced spin orientation increases from ∼0.1% in weak fields to ∼2% for ∼ E 1 kV cm −1 due to the anisotropic momentum distribution and decreases again when the field is increased further. Moreover, field-induced oscillations of the spin polarization of photocarriers are predicted for particular fields in this regime [79]. Spin filters based on a single loop are promising as spin valves or analyzers.…”

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confidence: 99%

“…Here Wilde and Grundler [76] demonstrate theoretically for 2D systems that magneto-oscillations in a tilted magnetic field provide a new pathway to achieve this goal. Several related studies focus on how Dyakonov-Perel spin relaxation is influenced by the interplay of Dresselhaus and Rashba effective magnetic fields [77][78][79]. The Dresselhaus term depends strongly on the crystalline growth direction.…”

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confidence: 99%

“…Golub and Ivchenko [79] have developed a general theory of current-induced spin orientation in 2D semiconductor systems for the streaming regime of transport, where the electrons accelerate ballistically until they reach the energy of optical phonons. The Dyakonov-Perel spin relaxation is drastically modified in this regime.…”

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confidence: 99%

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Focus on the Rashba effect

2015

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The Rashba effect, discovered in 1959, continues to supply fertile ground for fundamental research and applications. It provided the basis for the proposal of the spin transistor by Datta and Das in 1990, which has largely inspired the broad and dynamic field of spintronics. More recent developments include new materials for the Rashba effect such as metal surfaces, interfaces and bulk materials. It has also given rise to new phenomena such as spin currents and the spin Hall effect, including its quantized version, which has led to the very active field of topological insulators. The Rashba effect plays a crucial role in yet more exotic fields of physics such as the search for Majorana fermions at semiconductorsuperconductor interfaces and the interaction of ultracold atomic Bose and Fermi gases. Advances in our understanding of Rashba-type spin-orbit couplings, both qualitatively and quantitatively, can be obtained in many different ways. This focus issue brings together the wide range of research activities on Rashba physics to further promote the development of our physical pictures and concepts in this field. The present Editorial gives a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.

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Focus on the Rashba effect

2015

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“…3a), while in the system with BIA (D 2d group) direction of spin polarization crucially depends on the current direction relative to crystal axes as depicted in In significantly high electric field the regime known as 'streaming' is realized, when the electron accelerates in electric field up to the energy of optic phonon after that phonon is emitted and the process will repeat. The CISP in this case can reach about 2% [24]. Note here another mechanism of CISP: (i) based on spin-dependent scattering even without spin-splitting [25], (ii) bulk spin polarization generated by the spin Hall current [26].…”

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confidence: 78%

Current-induced spin orientation in semiconductors and low-dimensional structures

Аверкиев

Kokurin

2017

Journal of Magnetism and Magnetic Materials

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We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.Spin-orbit coupling (SOC) is a relativistic effect that provides a link between spin and electric field (including the field of light wave). The SOC is the basis of modern concept of semiconductor spintronics. One can distinguish two main type of the spin orientation at current carrying through the sample: (i) spin Hall effect (SHE), which is the spatial separation of carriers with opposite spins and (ii) homogeneous in the sample polarization. This paper is focused mainly on effect of homogeneous current-induced spin polarization (CISP), however, the related phenomena such as SHE, inverse SHE and other are discussed as well. We will conduct presentation adhering to the chronology of events, which coincides with the transition from bulk semiconductors to low-dimensional ones.SHE is due to so-called Mott-scattering [1], known in atomic physics, that is the asymmetry of the scattering relative to the plane determined by momentum and spin that in turn is due to SOC. In semiconductors the role of SOC increases and such an effect is several order of magnitude stronger. In 1971 Dyakonov and Perel predicted this phenomenon in semiconductors [2,3]. The name SHE was introduced later by Hirsch in 1999 [4] and the fist experimental observation of SHE was in Awschalom group [5] through more than 30 years after the prediction. The qualitative picture of SHE is depicted in Fig. 1a, where one can see, that the electrons with opposite spin orientation experience the scattering predominantly in opposite directions. This leads to accumulation of carriers with opposite spin projection at opposite sides of the sample at the length scales about spin diffusion length l s .The inverse SHE, i.e. the appearance of the dc current due to the nonhomogeneous spin polarization, was predicted by Averkiev and Dyakonov in 1983 [6] and detected by Bakun et al. [7] in the case, when inhomogeneous spin polarization appears due to spin diffusion after interband excitation under condition of optical orientation.There are two main differences between CISP and SHE: (i) homogeneous vs non-homogeneous spin polarization; (ii) CISP takes place only in gyrotropic semicon- * Electronic address: kokurinia@math.mrsu.ru ductors, while SHE can be realized even in structure with inversion center.Phenomenologically CISP is described by second rank pseudotensorQ linking the current density vector j and average spin pseudovector SFrom the symmetry point of view the gyrotropy means that the polar vector (current density) and axial vector (spin) transform under the same irreducible representation. Phenomenological description (1) shows that pseudotensorQ has non-zero component Q ik only if S i and j k equ...

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“…Dresselhaus spin-orbit interactions, electron spin precess with an average frequency Ω dr . Electrically induced spin beats and long spin relaxation times as well as high degree of the current induced spin polarization have been predicted for such a system [10,11]. However the comprehensive study of spin dynamics in the regime of substantial spin rotations in each acceleration period (Ω dr t tr ∼ 1) has not been made yet.…”

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Spin dynamics and fluctuations in the streaming regime

Smirnov

Golub

2015

Phys. Rev. B

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Spin dynamics of two-dimensional electrons in moderate in-plane electric fields is studied theoretically. The streaming regime is considered, where each electron accelerates until reaching the optical phonon energy, then it emits an optical phonon, and a new period of acceleration starts. Spin-orbit interaction and elastic scattering result in anisotropic relaxation of electron spin polarization. The overall spin dynamics is described by a superposition of spin modes in the system. The relaxation time of the most long-living mode depends quasi-periodically on the inverse electric field. The spin modes can be conveniently revealed by means of spin noise spectroscopy. It is demonstrated that the spectrum of spin fluctuations consists of peaks with the low-frequency peak much narrower than satellite ones, and the widths of the peaks are determined by the decay times of the modes.Comment: 9 pages, 5 figure

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Spin-dependent phenomena in semiconductors in strong electric fields

Cited by 15 publications

References 25 publications

Focus on the Rashba effect

Focus on the Rashba effect

Current-induced spin orientation in semiconductors and low-dimensional structures

Spin dynamics and fluctuations in the streaming regime

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