SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)

Petrosyants, Konstantin O.; Sambursky, Lev M.; Kozhukhov, Maxim V.; Ismail-zade, Mamed R.; Kharitonov, I. A.; Li, Bo

doi:10.1109/tcad.2020.3006044

Cited by 8 publications

(5 citation statements)

References 25 publications

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“…3 illustrates the BJT small signal model. The internal parameters within the dotted line are considered the intrinsic parameters of the transistor, while the external parameters outside the dotted line are categorized as the transistor's parasitic parameters [22][23][24][25][26]. Given that HBTs employ BJT as their base model and integrate various materials as heterostructures to enhance current [1,21,24], the small signal model of the BJT can serve as a fundamental basis for parameter prediction and extraction in the modeling process.…”

Section: Model Selectionmentioning

confidence: 99%

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Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Jianyu,

Mengdi,

Yifei

et al. 2024

IEICE Electron. Express

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Due to the low noise and high linearity characteristics of GaAs Hetero-junction Bipolar Transistors (HBTs), Low Noise Amplifiers (LNAs) are widely used in aerospace, communication, computer, and other fields. Extracting device model parameters is of great significance for subsequent research on the electromagnetic compatibility characteristics of such devices. In this paper, based on the small signal model, the model parameters of the amplifier are extracted by combining the I-V characteristics of the amplifier under different external voltage conditions. The linear model parameters are extracted using a fitting analysis method to obtain the Pspice circuit model of the GaAs amplifier under normal operating conditions. The simulation results align closely with the measured results. Compared with traditional modeling methods, this approach effectively resolves the issue of being unable to measure parameters due to chip packaging. This method holds substantial significance in extracting circuit model parameters and conducting in-depth research on circuit electromagnetic compatibility characteristics of this device.

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Section: Model Selectionmentioning

confidence: 99%

“…Gain curve of DUTFig.3illustrates the BJT small signal model. The internal parameters within the dotted line are considered the intrinsic parameters of the transistor, while the external parameters outside the dotted line are categorized as the transistor's parasitic parameters[22][23][24][25][26]. Given that…”

mentioning

confidence: 99%

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Jianyu,

Mengdi,

Yifei

et al. 2024

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Some researchers have also investigated the impact of total dose, neutron radiation, Co-60 source irradiation, gamma rays, and other nuclear radiation on BJT modeling. [11][12][13][14] Petrosyants et al 15 investigated control methods for test environments under high and low temperatures. The model for predicting the fall time was improved in Vijayalakshmi et al 16 In Wang et al, 17 the impact of composite effects under high temperature and high current on current gain was studied.…”

Section: Introductionmentioning

confidence: 99%

“…Some researchers have also conducted partial studies on extracting model parameters. In Montagner et al, 13 Petrosyants et al, 15 and Wang et al, 17 the extraction methods of some model parameters were introduced during the modeling of BJT under special effects. Ingvarson et al 20 and Linder et al 21 studied the extraction methods of the base and emitter resistances of BJT.…”

Section: Introductionmentioning

confidence: 99%

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryBipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs.

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“…The modeling of CMOS devices is conducted in Zhang et al, 15 Li et al, 21 and Petrosyants et al 22 Perumal et al 23 present a compact model for flexible analog/RF circuits design with amorphous indium‐gallium‐zinc oxide thin‐film transistors. Petrosyants et al 24 investigated control methods for test environments under high and low temperatures. McNuut et al, 25 Wang et al, 26 Yin et al, 27 Chen et al, 28 and Zhuolin et al 29 studied the general modeling of high‐voltage SiC MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

A MOSFET EMC modeling method based on electrical characteristic measurement and simplex optimization and particle swarm optimization

Pan,

Liu,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryMetal oxide semiconductor field effect transistors (MOSFETs) are widely used in various power electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for MOSFETs is crucial for EMC analysis of these systems, especially high‐frequency switching circuits. In this paper, a MOSFET EMC modeling method is proposed based on electrical characteristic measurement, simplex optimization, and particle swarm optimization (PSO), to make MOSFET models meet both functionality and EMC analysis requirements. First, systematic methods for extracting SPICE parameters based on physical MOSFETs are presented, including a proposed curve‐fitting method based on PSO for extracting the CDS‐VDS and ID‐VGS characteristic parameters. Second, parametric influence analyses are conducted on some important model parameters, and the law that these parameters affect the EMC of MOSFETs is obtained. Finally, the preliminary MOSFET model was optimized comprehensively using the simplex method. The measured and simulated results are in good agreement in both time domain and frequency domain. It proves that the established model meets the requirements for model accuracy in terms of both EMC and functionality. Therefore, the proposed EMC modeling method is feasible.

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SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)

Cited by 8 publications

References 25 publications

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

A MOSFET EMC modeling method based on electrical characteristic measurement and simplex optimization and particle swarm optimization

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