Spectroscopy of the deep levels in tin-doped Ga-Al-As

Balland, B.; Blondeau, R.; Mayet, L.; Cremoux, B. de; Hirtz, P.

doi:10.1016/0040-6090(80)90237-0

Cited by 17 publications

(6 citation statements)

References 9 publications

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“…Besides, the photo electric memcapacitors require only small AC voltages for the capacitance detection. [31][32][33][34][35] With this consideration, we design a planar Au/ La 1.875 Sr 0.125 NiO 4 (LSNO)/Au MSM structure (Figure 1b) for the demonstration of photoelectric memcapacitors. In addition, the photo electric memcapacitors can be made with a planar metal/semiconductor/metal (MSM) structure, which has many advantages, including simple device structure, large photosensing area, ultralow leakage current, and high sensitivity.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…The functioning of photoelectric memcapacitors relies on the persistent photocapacitance (PPC) effect. A significant PPC effect can be achieved if the charge carriers in either the bulk or interface region of an MSM structure are modulatable by light stimuli via slow charge trapping/detrapping processes . With this consideration, we design a planar Au/La 1.875 Sr 0.125 NiO 4 (LSNO)/Au MSM structure (Figure 1b) for the demonstration of photoelectric memcapacitors.…”

Section: Comparison Of Device Structure and Performance Between The Pmentioning

confidence: 99%

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An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Zhao

Fan

Cheng

et al. 2019

Adv Elect Materials

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away quickly when the light stimuli are removed. [3][4][5] In other words, traditional photodetectors can detect the images like a retina, but they lack the memory function owned by the visual cortex (see schematic illustration of human visual system in Figure 1a). To realize both detection and memory functions so as to better imitate the human visual system, researchers have attempted to integrate the photodetectors with the nonvolatile memory devices. [6][7][8][9] For example, a bioinspired visual system comprising an In 2 O 3 nanowire photodetector connected in series with an Al 2 O 3 memristor was fabricated recently, which could capture a butterflyshaped image and store it for more than 1 week. [9] In such integrated devices, however, the units responsible for detection, processing, and storage of optical information are physically separated, resulting in high power consumption for data transfer between different units (just as the Von Neumann bottleneck [10,11] ).A simple yet effective humanoid optoelectronic device emerging recently is the artificial optoelectronic synapse based on the photoelectric memristor, which can co-locate the detection and memory functions in a single unit. As the name suggests, a photoelectric memristor can continuously change its resistance upon light stimuli, resembling the physiological The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photo electric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La 1.875 Sr 0.125 NiO 4 /Au metal-semiconductormetal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, pairedpulse facilitation, short/longterm memory, and "learningexperience" behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling selfadaptive optical signal detection and mimicry of interestmodulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing lowpower humanoid optoelectronic devices.

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Comparison Of Device Structure and Performance Between The Pmentioning

confidence: 99%

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Zhao

Fan

Cheng

et al. 2019

Adv Elect Materials

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“…Because of 0C the very low peak temperatures and the carrier freeze-out problem mentioned earlier, it is difficult to E capture these peaks in DLTS. Balland U. et al[4], however, have reported a o0 peak in addition to the main peak of the Sn-DX center in current DLTS (but not observed in capacitance DLTS).…”

mentioning

confidence: 77%

“…(1) and (2) can be described by ... (4) As the capacitance goes through a step, the ratio of conductance frequency (G/W) goes through a peak at the frequency W. = 1/Teff It may noted that even though T and Tfef are different, the activation energy to be of Toff would be the same as that of T , if n and nT are temperature independent. This is normally the case for many semiconductors in which the free carriers are supplied by a shallow level, and the deep level is not significantly ionized in the neutral material in the temperature range of interest.…”

Section: Discussionmentioning

confidence: 98%

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On the Origin of Multiple Peaks in the Deep Level Admittance Spectroscopy of Dx Centers in AlGaAs:Sn

1990

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Deeplevel admittance spectroscopy (DLAS) of the Sn-DX centers in Al Ga As:Sn (0.2 < x < 0.6) shows three peaks SNi, SN2 and SN3. X L-XThe SN3 peak is identified to be related to the dominant peak of the Sn-DX center observed in the conventional DLTS technique. The SN1 and SN2 peaks are not easily seen in DLTS. A careful analysis of the DLAS data shows that the three peaks are not due to independent (chemically distinct) defects related to Sn, but they are caused by the multiple sates of the same DX center.

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Sn-X centers in GaAlAs thin layer emitters

Balland

Paviot

Cremoux

et al. 1981

Phys. Stat. Sol. (a)

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Different thin film GaAlAs structures (Schottky diodes) with various Sn concentration are studied. Their behaviour is similar to electroluminescent emitters (LED and laser diodes). I t is observed that Sn controls the behaviour of the layers if z > 0.15. The deep level spectroscopy shows the existence of various donor-levels associated with the Sn impurity. Their concentration is correlated to the amount of Sn introduced into the epitaxial growth solution. These centers show the D-X center characteristics (in particular the existence of a barrier preventing carriers capture) and may be considered as complex defects made of an Sn atom associated with one or many vacancies.Diverses structures couches minces de GaAlAs (diodes Schottky) de composition variable e t presentant une concentration en Sn plus ou moins &levee ont BtB 6tudiBes. Leur comportement prbsente une similitude avec celui des Bmetteurs 6lectroluminescents (diodes Blectroluminescentes e t diodes laser). I1 a &ti: observe que Sn contr6le le comportement des couches si . z > 0,15. Une spectroscopie des niveaux profonds a permis de mettre en evidence plusieurs niveaux de type donneur qui paraissent caractkristiques de I'impuret8 Sn. Leur concentration est corrklee A la quantitk de Sn introduite dans le bain de croissance 6pitaxiale. Ces centres prksentent les caracteristiques des centres D-X (notamment l'existence d'une barrihre s'opposant A la capture des porteurs) et peuvent &tre considkrks comme defauts complexes dans lesquels sont associes un atome de Sn et une ou plusieurs lacunes.

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Spectroscopy of the deep levels in tin-doped Ga-Al-As

Cited by 17 publications

References 9 publications

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

On the Origin of Multiple Peaks in the Deep Level Admittance Spectroscopy of Dx Centers in AlGaAs:Sn

Sn-X centers in GaAlAs thin layer emitters

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