Spectroscopic studies of microwave plasmas containing hexamethyldisiloxane

Nave, A S C; Mitschker, Felix; Awakowicz, Peter; Röpcke, J.

doi:10.1088/0022-3727/49/39/395206

Cited by 11 publications

(17 citation statements)

References 52 publications

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“…[33,75] By detecting the generation of alkanes, the decomposition path of the precursor can be inferred, and the reaction path can be further determined. [96] Figure 4 shows the gas composition results of the experiment and simulation. The experimental results are in good agreement with the simulation results.…”

Section: Gc Results and Simulated Species Densitymentioning

confidence: 99%

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

Chang

Dai

Kong

et al. 2023

Plasma Processes & Polymers

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A chemical kinetic model is developed to study the decomposition of tetraethoxysilane (TEOS) in O2/Ar atmospheric pressure dielectric barrier discharge and compared with gas chromatography and optical emission spectroscopy results. The calculations indicate that the excited Ar dominates the fragmentation of TEOS in the absence of oxygen and mainly breaks the carbon–carbon bonds in TEOS. However, in the presence of oxygen, the primary decomposition process of TEOS is the substitution of ethoxy (–OC2H5) by hydroxyl (–OH). The variation of these two reactions with oxygen composition could explain the transition of the deposition layer from organic to norganic. The model and its results provide a theoretical basis for further modeling and regulating the quality of the deposition layer.

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Section: Gc Results and Simulated Species Densitymentioning

confidence: 99%

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

Chang

Dai

Kong

et al. 2023

Plasma Processes & Polymers

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show abstract

“…Nave et al demonstrated the detection of absolute densities of deposition products and excess gases by applying infrared laser absorption spectroscopy. [22] An alternative approach to characterize the gas phase chemistry of a deposition process is the application of a mass spectrometer. Depending on the configuration, a mass spectrometer can provide insight into the fragmentation pattern, detection of film-forming species and byproducts, radical densities, and ion energy distribution functions.…”

Section: Plasma Volume (Transport and Reactions)mentioning

confidence: 99%

PECVD and PEALD on polymer substrates (part I): Fundamentals and analysis of plasma activation and thin film growth

de los Arcos,

Awakowicz,

Benedikt

et al. 2023

Plasma Processes & Polymers

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This feature article presents recent results on the analysis of plasma/polymer interactions and the nucleation of ultra‐thin plasma films on polymeric substrates. Because of their high importance for the understanding of such processes, in situ analytical approaches of the plasma volume as well as the plasma/substrate interfaces are introduced before the findings on plasma surface chemistry. The plasma activation of polymeric substrates is divided into the understanding of fundamental processes on model substrates and the relevance of polymer surface complexity. Concerning thin film nucleation and growth, both plasma‐enhanced chemical vapor deposition and plasma‐enhanced atomic layer deposition processes as well as the combination of both processes are considered both for model substrates and technical polymers. Based on the comprehensive presentation of recent results, selective perspectives of this research field are discussed.

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“…More recently, Ropcke's [22] group performed a detailed characterization of the HMDSO plasma by optical emission spectroscopy (OES) in the visible spectral range and infrared laser absorption spectroscopy (IRLAS). They used a plasma reactor of a rather large power density (discharge power per volume of the discharge chamber) of the order of 100 W per liter.…”

Section: Introductionmentioning

confidence: 99%

Distribution of the Deposition Rates in an Industrial-Size PECVD Reactor Using HMDSO Precursor

et al. 2021

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The deposition rates of protective coatings resembling polydimethylsiloxane (PDMS) were measured with numerous sensors placed at different positions on the walls of a plasma-enhanced chemical vapor deposition (PECVD) reactor with a volume of approximately 5 m3. The plasma was maintained by an asymmetric capacitively coupled radiofrequency (RF) discharge using a generator with a frequency 40 kHz and an adjustable power of up to 8 kW. Hexamethyldisiloxane (HMDSO) was leaked into the reactor at 130 sccm with continuous pumping using roots pumps with a nominal pumping speed of 8800 m3 h−1 backed by rotary pumps with a nominal pumping speed of 1260 m3 h−1. Deposition rates were measured versus the discharge power in an empty reactor and a reactor loaded with samples. The highest deposition rate of approximately 15 nm min–1 was observed in an empty reactor close to the powered electrodes and the lowest of approximately 1 nm min–1 was observed close to the precursor inlet. The deposition rate was about an order of magnitude lower if the reactor was fully loaded with the samples, and the ratio between deposition rates in an empty reactor and loaded reactor was the largest far from the powered electrodes. The results were explained by the loss of plasma radicals on the surfaces of the materials facing the plasma and by the peculiarities of the gas-phase reactions typical for asymmetric RF discharges.

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Spectroscopic studies of microwave plasmas containing hexamethyldisiloxane

Cited by 11 publications

References 52 publications

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

PECVD and PEALD on polymer substrates (part I): Fundamentals and analysis of plasma activation and thin film growth

Distribution of the Deposition Rates in an Industrial-Size PECVD Reactor Using HMDSO Precursor

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