1999
DOI: 10.1016/s0022-2860(99)00165-9
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Spectroscopic studies of different aluminosilicate structures

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Cited by 131 publications
(71 citation statements)
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“…This band is associated with broken silicon-oxygen (Si-O − ) bridges (22,23). This means that the water saturation caused degradation of silicon-oxygen networkbreaking of silicon-oxygen bridges Si-O-Si (22,23).…”
Section: The Structure Of Brick In the Light Of Middle Infrared Spectmentioning
confidence: 99%
“…This band is associated with broken silicon-oxygen (Si-O − ) bridges (22,23). This means that the water saturation caused degradation of silicon-oxygen networkbreaking of silicon-oxygen bridges Si-O-Si (22,23).…”
Section: The Structure Of Brick In the Light Of Middle Infrared Spectmentioning
confidence: 99%
“…In contrast, most investigators identify a Raman band near 975 cm )1 with a chain like Q 2 silicate structure [14,69,[75][76][77][78][86][87][88][89]91,92] like that of Na 2 SiO 3 ( figure 5, table 2). Likewise, bands near 764 and 706 cm )1 have been associated with Si-O stretching [88] though a d Si-O-Si vibration has also been assigned to 769 cm )1 Raman shift in certain aluminosilicates [90]. A band in the 910-940 cm )1 region that also appears in various calculations of spectra of a fully dissociated, Q 0 type orthogonal [SiO 4 ] 4) monomer ion [14,64] has been assigned to m as Si-O [14,64,88], d O-Si-O [88], and Q 3 type m Si-O-Si [75,79,87] vibrations.…”
Section: Raman Spectramentioning
confidence: 99%
“…1 summarize the key findings concerning Al 2 O 3 nucleation and growth chemistry on HF-etched Si͑100͒. 10 The initial H/Si surface ͑a͒ is atomically rough ͑exhibiting double-layer roughness͒, with a broad and structured Si-H stretching band centered at 2110 cm Ϫ1 , associated with mono-, di-, and trihydrides, 14 and a weaker band at 2250 cm Ϫ1 arising from oxidized Si-H. 15 10 While oxidized TMA, probably due to gas impurities, leads to the formation of interfacial Si-O-Al bond arrangements ͑800 and 1000-1100 cm Ϫ1 ), 10,18 inadvertent SiO 2 formation is limited to less than 0.25 Å. Once the H/Si͑100͒ surface has been functionalized by TMA, a water pulse ͑e͒ replaces Al-bonded CH 3 ͑but not Si-bonded CH 3 ) by OD and gives rise to subsurface SiO 2 .…”
mentioning
confidence: 99%