2003
DOI: 10.1063/1.1595719
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Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Abstract: A route is presented for activation of hydrogen-terminated Si(100) prior to atomic layer deposition. It is based on our discovery from in situ infrared spectroscopy that organometallic precursors can effectively initiate oxide growth. Narrow nuclear resonance profiling and Rutherford backscattering spectrometry show that surface functionalization by pre-exposure to 108 Langmuir trimethylaluminum at 300 °C leads to enhanced nucleation and to nearly linear growth kinetics of the high-permittivity gate dielectric… Show more

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Cited by 115 publications
(77 citation statements)
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References 19 publications
(24 reference statements)
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“…. 27 It should be emphasized that the measurement procedure ( Fig. 3(a)) is not representative of the typical conditions employed during ALD, as the surface is exposed to a high pressure of H 2 O (4 Torr for ∼30 s, corresponding to ∼10 8 L) during the closure of the valve between the chamber and the pump which is not accounted for in the above exposure estimate.…”
Section: Ohmentioning
confidence: 99%
“…. 27 It should be emphasized that the measurement procedure ( Fig. 3(a)) is not representative of the typical conditions employed during ALD, as the surface is exposed to a high pressure of H 2 O (4 Torr for ∼30 s, corresponding to ∼10 8 L) during the closure of the valve between the chamber and the pump which is not accounted for in the above exposure estimate.…”
Section: Ohmentioning
confidence: 99%
“…This limits the ultimate lowest EOT that ALD can presently achieve. However, the development of ALD precursors which do nucleate on H-terminated Si and different processing strategies will overcome this obstacle when needed [33,34].…”
Section: Depositionmentioning
confidence: 99%
“…A convenient approach for depositing such films ͑oxides and mixed oxides͒ is the atomic layer deposition ͑ALD͒ technique, where self-saturating surface chemical reactions are employed. This approach 5,6 has been successfully applied to control chemical reactions at the Si/ high-k and high-k / gate electrode interfaces, as well as to obtain ͑HfO 2 ͒ x ͑Al 2 O 3 ͒ 1−x structures retaining sufficiently high dielectric constant and remaining amorphous up to high processing temperatures. Metastable defect configurations owing to the low-temperature film deposition process can be suppressed by postdeposition annealing.…”
mentioning
confidence: 99%
“…The 27 Al͑p , ␥͒ 28 Si nuclear reaction around the resonance in the cross section curve at 992 keV was used for that purpose as performed in Ref. 5. These methods give precisions for Hf, Al and O areal densities of about 3%, 10% and 10%, respectively.…”
mentioning
confidence: 99%
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