Spectroscopic ellipsometry modeling of ZnO thin films with various O2 partial pressures

Cho, Edward Namkyu; Park, Suehye; Yun, Ilgu

doi:10.1016/j.cap.2012.05.030

Cited by 22 publications

(9 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Similar to the analogous crystallinity, the optical properties of ZnO films deposited with different O 2 plasma times and thermal cycles also remain unchanged as shown in Additional file 1 : Figure S2. This is consistent with the reported works that a change of crystallinity is always associated with a change of optical properties [ 28 , 32 ]. The morphological properties of the ZnO films are characterized by AFM.…”

Section: Resultssupporting

confidence: 94%

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

View full text Add to dashboard Cite

A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2308-1) contains supplementary material, which is available to authorized users.

show abstract

Section: Resultssupporting

confidence: 94%

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…The film thickness was around 82.2 nm and almost matches the values obtained from cross-section SEM. Refractive index values obtained for ZnO and Al 2 O 3 are nearly the same and are in good agreement with the literature [17,18]. The x-ray diffraction (XRD) pattern of ZnO thin film grown on the glass substrate is shown in figure 3.…”

Section: Resultssupporting

confidence: 88%

Increasing the silicon solar cell efficiency with transition metal oxide nano-thin films as anti-reflection coatings

Sagar

Rao²

2020

Mater. Res. Express

View full text Add to dashboard Cite

Herein, we report the study on RF-sputtered transition metal oxide thin films of Zinc oxide, Magnesium oxide, and Aluminum oxide as an antireflection coating on silicon-based solar cells and their influence on energy conversion. The transmission spectrum of all sputtered metal oxides was studied using a UV-visible spectrophotometer. The phase formation and microstructure analysis of these sputtered oxides were studied using glass for the destructive test along with the device. The x-ray diffraction and cross-section scanning electron microscopy of sputtered glass confirmed a singlephase structure along with nearly equal desired deposition thickness. The thicknesses of sputtered films were estimated using variable angle ellipsometry and the same was confirmed from cross-section scanning electron micrograph. The chemical composition and oxidation state of thin films deposited on glass were established from x-ray photoemission spectroscopy. The ability of a fabricated device deposited with the antireflection layer in converting photon energy to electrical energy was studied using a solar simulator under 1 sun condition. The ability to collect charge carriers of the antireflection coated device as a function of wavelength was also studied using quantum efficiency measurement.

show abstract

“…The pressure within a visible range (400 -730 nm) by Cho et al [31]. In their investigation, the Cauchy model was used to calculate the refractive indices which were found to be 1.9 -2.2 with O 2 partial pressure of 50% and no numerical values were found for the extinction coefficients.…”

Section: Resultsmentioning

confidence: 99%