Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices

Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M.

doi:10.1063/1.367376

Cited by 11 publications

(3 citation statements)

References 26 publications

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“…Intermixing of the anion species can result in diffuse interfaces and hence poor reproducibility, however recent reports suggest that the technology has advanced sufficiently that, when using low growth temperatures, full control of the interface lineup can be obtained [19,20]. Since we are focusing upon the gross bandstructure features such as the fundamental gap and the transition strengths with regard to absorption spectra we shall not consider the effects of interface or alloy disorder.…”

Section: Methodsmentioning

confidence: 99%

Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Corbin¹,

Shaw²,

Kitchin³

et al. 2001

Semicond. Sci. Technol.

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We perform a systematic study of the factors governing the optical properties of type II Ga 1−x In x Sb/InAs superlattice structures. We map the parameter space corresponding to the layer widths, alloy concentrations and interface bonding types, and identify those structures for which the fundamental gap lies in the desired range for device application. In addition, we examine the higher lying miniband energies to assess the structures for favourable Auger recombination limits. The microscopic interface bonding configuration is shown to have a significant impact upon the magnitude of the fundamental gap, and confirms the requirement for full-bandstructure calculations in the evaluation of possible structures. We study the features of the optical spectra for those structures whose bandstructures are recognized as most suitable for detector applications.

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Section: Methodsmentioning

confidence: 99%

Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Corbin¹,

Shaw²,

Kitchin³

et al. 2001

Semicond. Sci. Technol.

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“…Hereinafter, ℏ will be omitted and the photon energy will be simplified to ω to alleviate the notation. Since the SL region has optical properties distinct from those of its constituent materials, the SL is modeled as a single layer with its own unique set of optical constants (Methods section). − …”

mentioning

confidence: 99%

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures

et al. 2022

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Interfaces are ubiquitous in semiconductor low-dimensional systems used in electronics, photonics, and quantum computing. Understanding their atomic-level properties has thus been crucial to controlling the basic behavior of heterostructures and optimizing the device performance. Herein, we demonstrate that subnanometer interfacial broadening in heterostructures induces localized energy states. This phenomenon is predicted within a theory incorporating atomic-level interfacial details obtained by atom probe tomography. The experimental validation is achieved using heteroepitaxial (Si1–x Ge x ) m /(Si) m superlattices as a model system demonstrating the existence of additional paths for hole–electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are evaluated at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV, thus extending the optical absorption to lower energies. This phenomenon is shown to provide an optical fingerprint for a straightforward and nondestructive probe of the subnanometer broadening in heterostructures.

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“…The ellipsometric parameters Ψ and ∆ are acquired at an angle of incidence (AOI) between 55°and 80°with a 5°step covering photon energy ω from 1.5 to 6 eV. Since the SL region has distinct optical properties than its constituent materials, the SL is modeled as a single layer with its own unique set of optical constants [49][50][51].…”

mentioning

confidence: 99%

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

Attiaoui,

Fettu,

Mukherjee

et al. 2022

Preprint

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A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadening. Applying this model to ultrathin heteroepitaxial (Si1−xGex)m/(Si)m superlattices predicts the existence of localized energy levels in the band structure induced by sub-nanometer broadening, which provides additional paths for hole-electron recombination. These predicted interfacial electronic transitions and the associated absorptive effects are confirmed experimentally at variable superlattice thickness and periodicity. By mapping the energy of the critical points, the optical transitions are identified between 2 and 2.5 eV thus extending the optical absorption to lower energies. This phenomenon enables a straightforward and non-destructive probe of the atomic-level broadening in heterostructures.

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Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices

Abstract: Articles you may be interested inVibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry

Cited by 11 publications

References 26 publications

Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

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Spectroscopic ellipsometry for characterization of InAs/Ga1−xInxSb superlattices

Abstract: Articles you may be interested inVibrational mode and dielectric function spectra of BGaP probed by Raman scattering and spectroscopic ellipsometry

Cited by 11 publications

References 26 publications

Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures

Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures

Contact Info

Product

Resources

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Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range