Spectroscopic and photorefractive characterization of cadmium telluride crystals codoped with vanadium and manganese

Electron paramagnetic resonance as a probe of technologically relevant processing effects on CdTe solar cell materials

“…Al, Mn, I, and Pr are the only four elements that meet these requirements, with Al and by Schwartz et al reports an isotropic g value of of 61 Gauss [6], results irely consistent with results presented in this paper. Therefore, with a high degree of certainty, we associate the six line spectrum with Mn.…”

Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications

“…Using these procedures we have successfully grown undoped and transition metal-doped binary and ternary II-VI crystals including semi-magnetic crystals of both IIa-VI and IIb-VI compounds. We have used these crystals to demonstrate novel applications [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][32][33][34] of which we have discussed two applications in which we used these II-VI crystals for mid-IR solid-state lasing and remote laser vibrometry.…”

“…At Brimrose Corporation, we have produced bulk crystals of a variety of IIa-VI and IIb-VI binary and ternary bulk crystals and demonstrated their applications along with various collaborators [16][17][18][19][20][21][22][23][24][25][26][27][28][29]. In this paper, we discuss two of the recent and novel applications of CdTe and CdMnTe crystals for: (i) room temperature operating tunable mid-IR lasers and (ii) remote laser vibrometers for monitoring vital signs.…”

Photorefractive recording in ac-biased cadmium telluride

“…Several dopants are known at present that form in cadmium telluride impurity levels involved in photoinduced charge redistribution and enhance in such a way photorefractive sensitivity. These are vanadium [2], vanadium co-doped with manganese [3], germanium [4] and tin [5]. It was shown that some germanium-doped samples ensure the largest photorefractive coupling strength among all semiconductors without applied electric field [6].…”