Photorefractive recording in ac-biased cadmium telluride

Shcherbin, K.; Danylyuk, V.; Zakharuk, Z. I.; Раренко, И. М.; Klein, Martin

doi:10.1016/j.jallcom.2003.07.039

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2006

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“…CdTe:Ge crystals have been widely studied in recent years in view of interesting photorefractive properties of this material having practical application [1][2][3]. Electric [4,5], photoelectric [6], and magnetic [7] properties of germanium-doped CdTe crystals are explained based on model [8] which foresees an amphoteric action of given impurity.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth temperature conditions on electric properties of CdTe:Ge crystals

Nikonyuk

Zakharuk

Rarenko

et al. 2006

Phys. Status Solidi (c)

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A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post‐growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. GeTe defect is an acceptor defining the electric and photoelectric properties at T ≤ 290 K. GeCd donors and deep (GeCdVCd)/ acceptors are generated in lesser amount. Long‐term ingot thermal treatment at T < 1090 K causes germanium atom relocalization chiefly into cadmium sublattice. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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