Spectrophotometric control of dope distribution profiles in laminated semiconductor structures

Artemenko, O. L.; Litvinovich, G. V.; Matchenya, V. K.; Nelaev, V. V.; Sevruk, B. B.

doi:10.1007/bf00664941

J Appl Spectrosc

1993

DOI: 10.1007/bf00664941

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Spectrophotometric control of dope distribution profiles in laminated semiconductor structures

O. L. Artemenko

G. V. Litvinovich

V. K. Matchenya

et al.

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1999

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“…Dispersion dependencies of IR radiation reflection (a) and transmission b) in Zn-doped GaAs profiles corresponding to D0=2x1013 (1), 1012(2) and 5x10 2(3) cm2s1 with (solid lines) and without (dashed lines) considering lattice contribution.CONCLUSIONSThe possibility of the determination of the charge carrier effective mass m* and relaxation time 'r concentration dependencies from the experimental spectrophotometrical data and theoretical calculations is established. It is shown that the sensitivity of the numerical techniques for the determination of these fundamental parameters can be eliminated by the use of discovered peculiarities ofR(X) and T(X) spectra.…”

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Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

Nelayev

Sevruk

1999

SPIE Proceedings

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The numerical simulation of infrared reflection and transmission spectra for ununifomly doped semiconductor structures (P and As in Si and Zn in GaAs) was performed. The radiation interaction with free electrons as well as phonons was taken into account. The possibility of determination ofthe carrier effective mass m* and relaxation time 'C concentration dependencies from the spectrophotometrical measurements was established. THEORYThe problem of the dispersion dependencies calculation of the infrared radiation reflection R(X) and transmission coefficients T() in ununiformly doped semiconductor structures (the direct problem) was earlier considered in 12 and was later developed in for the reconstruction of the concentration profiles (the reverse problem). This method is nondestructive, non-contacted, sufficiently operative and thus is extremely perspective for the use in modem micro-and optoelectronics technology.The idea of this method consists in the iteration fitting of R(2), T(X) spectra, calculated on the basis of Drude-Lorentz theory and obtained from the solution of non-linear diffusion equation provided the impurity redistribution under high-temperature treatment, to experimental data. This iteration procedure is run by means of parameters variation which assign the concentration dependency of impurity diffusivities. RESULTSThe concentration dependency of m* and -r was studied in 6,7 for Si and InSb with electron conductivity. We are discussed own results for Zn doped GaAs (hole conductivity).Typical results are presented in Fig. 1 . The intersection point of R(X), T(?) curves is corresponded to the certain wave length ? (govemed by m* and 'r values) at the vicinity of the plasma resonance frequency a,, which designs the effective mass of carrier charge (D = [C(z)e2/s Co m*]h'2. Here C(z) is impurity concentration profile, e is electron charge, c, and s are dielectric constants ofthe substrate material and vacuum respectively. RA), T() curves in Fig. 1 are calculated for certain surface impurity concentration C2x1O1 cm2 and for different impurity diffusivities corresponding to the different treatment temperatures that designs the different impurity concentration profiles C(z) from the solution ofthe non-linear diffusion equation. The same results are obtained for Si.The main distinctive feature of proposed method for the determination of the concentration dependency of m* and t from one described in 6,7 is in more accurate determination of the impurity concentration profile C(z) and thus in more real determination ofm*[C] and 'r[C] dependencies. SPIE Vol. 3687 • 0277-786X/99/$1O.OO 125 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

Nelayev

Sevruk

1999

SPIE Proceedings

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Spectrophotometric control of dope distribution profiles in laminated semiconductor structures

Cited by 1 publication

References 6 publications

Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

Evaluation of the carrier effective mass and relaxation time in nonuniformly doped semiconductor structures on the basis of spectrophotometrical experiments

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