Spectromicroscopy beamline at ELETTRA: Performances achieved at the end of commissioning

Barbo, F.; Bertolo, M.; Bianco, Anna Monica; Cautero, G.; Fontana, Stefano; Johal, T. K.; Rosa, S. La; Margaritondo, G.; Kaznacheyev, K.

doi:10.1063/1.1150148

Cited by 54 publications

(27 citation statements)

References 14 publications

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“…Depending on the photon spot size achieved, such scanning instruments can be called 'mARPES' or 'nARPES' for the micrometer or nanometer length scale, respectively. Such machines are either already operating [at synchrotrons Elettra (Barbo et al, 2000;Dudin et al, 2010) and Soleil (Avila et al, 2013c,b;], are currently being commissioned [at ALS (Rotenberg, 2010;Bostwick et al, 2012)] or are in various stages of planning worldwide (e.g. Diamond, NSLS-2, Petra III, SSRL, etc.).…”

Section: Spatial Resolutionmentioning

confidence: 99%

“…Depending on the ZP parameters, the OSA may have to be placed quite close to the sample, limiting both the access of the detector to the emitted electrons, as well as the capabilities (for example, heating and cooling) of the sample holder. These problems have been addressed in three ways: (i) by scaling up the overall size of the instrument (requiring larger ZPs and more floorspace, at higher cost) (Avila et al, 2013c); (ii) by reducing the size of the OSA and ZP positioning systems through miniaturization (requiring greater engineering effort, also at higher cost) (Bostwick et al, 2012); and (iii) by using reflective schemes such as Schwarzschild optics (requiring expensive optics) (Barbo et al, 2000). new science opportunities Table 1 Energy resolution regimes for ARPES.…”

Section: Spatial Resolutionmentioning

confidence: 99%

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microARPES and nanoARPES at diffraction-limited light sources: opportunities and performance gains

Rotenberg

Bostwick

2014

J Synchrotron Rad

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The scientific opportunities for microARPES and nanoARPES techniques are discussed, and the benefits to these techniques at diffraction-limited light sources are presented, in particular the impact on spectromicroscopic ARPES (angle-resolved photoemission spectroscopy) of upgrading the Advanced Light Source to diffraction-limited performance. The most important consideration is whether the space-charge broadening, impacting the energy and momentum resolution, will limit the possible benefits for ARPES. Calculations of energy broadening due to space-charge effects will be presented over a wide range of parameters, and optimum conditions for ARPES will be discussed. The conclusion is that spectromicroscopic ARPES will greatly benefit from the advent of diffraction-limited light sources; space-charge broadening effects will not be a limiting factor.

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Section: Spatial Resolutionmentioning

confidence: 99%

Section: Spatial Resolutionmentioning

confidence: 99%

microARPES and nanoARPES at diffraction-limited light sources: opportunities and performance gains

Rotenberg

Bostwick

2014

J Synchrotron Rad

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“…10 This beamline uses a photon energy of 95 eV-corresponding to a wavelength of 13.1 nm-and is ended by a Schwarzschild objective which produces an EUV spot of 0.5 m full width at half maximum. The acquisition of the image is performed by scanning the sample under the spot.…”

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confidence: 99%

Highly sensitive detection technique of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy

Farys

Schiavone

Polack

et al. 2005

Applied Physics Letters

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A technique to probe defects buried inside extreme ultraviolet (EUV) masks has been implemented using a dark-field microscopy detection setup. Specific samples have been fabricated to evaluate the sensitivity of this technique. They consist of silicon oxide gratings of a few nanometers height, coated with 40 layer pairs of molybdenum-silicon. We observed images with a good contrast on samples with defects as low as 3 nm. However, the imaging mechanism of scanning dark-field microscopy is not linear and can produce image distortions. Conditions of correct imaging have been analyzed, and simulations have been performed that show good agreement with the experimental data. This work opens the way for a better understanding of the capability of at-wavelength inspection technique for EUV mask

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“…5 More recently, the importance of the availability of spatially resolving techniques has been demonstrated by a scanning photoemission microscopy study of Ba 1Ϫx K x BiO 3Ϫy single crystals. 6 At the Spectromicroscopy beamline of ELETTRA, 7 we performed a photoemission microscopy study on the cleaved surface of a Bi 2 Sr 2 CaCu 2 O 8ϩ␦ single crystal. This technique uses the strength of the photoemission spectroscopic analysis, which probes the single-particle density of states.…”

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confidence: 99%

Photoemission spectromicroscopy study of aBi2Sr2CaCu2

et al. 2002

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We performed a photoemission microscopy study on cleaved surfaces of a Bi 2 Sr 2 CaCu 2 O 8ϩ␦ single crystal. Our findings show that pronounced inhomogeneity effects exist even on good quality single crystals. The length scale of the observed features ranges from a few microns to a few hundred microns. We discuss the importance of our results for the interpretation of conventional photoemission experiments on Bi 2 Sr 2 CaCu 2 O 8ϩ␦ which typically probe an area of the order of 1 mm 2 .Shortly after the discovery of high-T c superconductors, 1 it was recognized that the surface of these compounds is inhomogeneous. A high-resolution electron-energy-loss spectroscopy investigation, with a spatial resolution of the order of 50 m, demonstrated that both superconducting and nonsuperconducting areas coexist on the surface of cleaved YBa 2 Cu 3 O 7 and Bi 2 Sr 2 CaCu 2 O 8 single crystals. 2 Inhomogeneities of the chemical composition were reported by scanning Auger microscopy studies of YBa 2 Cu 3 O 7Ϫy surfaces 3 and by photoemission electron microscope investigations of HgBa 2 Ca 2 Cu 3 O 8ϩ␦ and HgBa 2 CaCu 2 O 6ϩ␦ ͑Ref. 4͒ and single crystals of Bi 2 Sr 2 CaCu 2 O 8ϩ␦ . 5 More recently, the importance of the availability of spatially resolving techniques has been demonstrated by a scanning photoemission microscopy study of Ba 1Ϫx K x BiO 3Ϫy single crystals. 6 At the Spectromicroscopy beamline of ELETTRA, 7 we performed a photoemission microscopy study on the cleaved surface of a Bi 2 Sr 2 CaCu 2 O 8ϩ␦ single crystal. This technique uses the strength of the photoemission spectroscopic analysis, which probes the single-particle density of states. Here we put particular attention to the region close to the Fermi edge which is the important one for the superconductivity. This allows one to detect, with a submicron spatial resolution, variations of the electronic structure which are more subtle than topographical or chemical composition inhomogeneities and which would therefore be undetectable with other microscopy techniques.The oxygen doping of the Bi 2 Sr 2 CaCu 2 O 8ϩ␦ sample was close to optimum (T c ϭ91 K). More details about the sample and its characterization by low-energy electron diffraction ͑LEED͒ and angle-resolved photoelectron spectroscopy ͑ARPES͒ can be found in Ref. 8. The sample was cleaved and measured at room temperature. The photon energy used was 95 eV. The energy of the photoelectrons was analyzed by a hemispherical analyzer with a 16-channel detector ͑the difference in energy between adjacent channels is 8% of the analyzer's pass energy͒. The images we present here are obtained by taking the counts of a single channel and are therefore associated to a given energy, or the sum of a few channels and are therefore associated to a given energy range. The photoelectrons were detected in the horizontal plane at 30°grazing angle from the sample surface with an acceptance of Ϯ5°. At the kinetic energy of the valence band, this gives k ʈ ϭ4.2Ϯ0.2 Å Ϫ1 . By comparison with the size of the Brillouin zone (⌫X...

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Spectromicroscopy beamline at ELETTRA: Performances achieved at the end of commissioning

Cited by 54 publications

References 14 publications

microARPES and nanoARPES at diffraction-limited light sources: opportunities and performance gains

microARPES and nanoARPES at diffraction-limited light sources: opportunities and performance gains

Highly sensitive detection technique of buried defects in extreme ultraviolet masks using at-wavelength scanning dark-field microscopy

Photoemission spectromicroscopy study of aBi2Sr2CaCu2

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