Spectral tunability for accuracy, robustness, and resilience

Peled, Einat; Amit, Eran; Lamhot, Yuval; Svizher, Alexander; Klein, Dana; Marchelli, Anat; Volkovich, Roie; Yaziv, Tal; Cheng, Aaron M.; Lee, Honggoo; Han, Sangjun; Hong, Minhyung; Kim, Seungyoung; Lee, Jieun; Lee, Dongyoung; Oh, Eungryong; Choi, Ahlin; Choi, DongSub; Lee, Dohwa; Jeon, Sanghuck; Lee, Jung-Tae; Lee, Seongjae; Liu, Zephyr; Lee, Jeongpyo; Robinson, John C.

doi:10.1117/12.2300507

Cited by 3 publications

(4 citation statements)

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“…Scatterometry 78-80 is a non-imaging optical technique that allows sub-nanometre model-based measurements of overlay effects 81,82 , geometrical CDs and optical constants (e.g., n & k ) of patterned arrayed structures (Fig. 4a,b).…”

Section: Advanced Metrology Techniquesmentioning

confidence: 99%

“…For scatterometry-based overlay, displacement between the layers is determined from intensity variations among the diffracted orders from stacked gratings. Although image based overlay (using specialized optical imaging tools) has traditionally been used in the industry, scatterometry-based overlay 82,83 is increasingly popular due to its precision and process compatibility 47 .…”

Section: Advanced Metrology Techniquesmentioning

confidence: 99%

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Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

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Section: Advanced Metrology Techniquesmentioning

confidence: 99%

Section: Advanced Metrology Techniquesmentioning

confidence: 99%

Metrology for the next generation of semiconductor devices

Badaroglu²,

et al. 2018

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“…In a typical SCOL landscape, we identify two types of wavelength ranges, named "resonances" and "flat regions" [5].…”

Section: Rq Apodizer and Landscape Extensionmentioning

confidence: 99%

Enhancement of overlay metrology accuracy by multi-wavelength scatterometry with rotated quadrupole illumination

Kim

Jeong

Hong

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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As DRAM technology continues to evolve, advanced nodes shrink the device dimensions and raise the requirements for on-product overlay control to reduce residual error. Increased process complexity also demands tighter accuracy and robustness in metrology control, which necessitates new and innovative metrology enhancements and methods. Scatterometry-based overlay (SCOL®) metrology is a unique overlay metrology architecture that uses angle-resolved pupil imaging for overlay analysis and calculation. KLA’s SCOL metrology system offers wide-spectrum tunable laser and multi-wavelength (MWL) illumination patterns along with custom-designed advanced algorithms that provide multiple measurement conditions to meet unique layer and target requirements. This paper demonstrates improved overlay metrology accuracy and residual error on DRAM FEOL critical layer with SCOL technology. Multiwavelength and rotated quadrupole (RQ) illumination in the metrology tool are utilized to provide significantly improved residuals compared with the traditional single-wavelength (SWL) and on-axis illumination.

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“…As the critical dimension (CD) approaches to deep sub-wavelength sizes which are deeply beyond the resolution limit, optical metrology has been transitioning from image-based microscopy to scatterometry-based microscopy using the model-based metrology that matches measured scattered intensity profiles to the modeling [8][9][10]. A key challenge of this scatterometry-based metrology is the accurate dimensional measurement for nanoscale features, which requires high measurement sensitivity with low uncertainty as well as high throughput [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy

et al. 2019

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Optical scatterfield imaging microscopy technique which has the capability of controlling scattered fields in the imaging mode is useful for quantitative nanoscale dimensional metrology that yields precise characterization of nanoscale features for semiconductor device manufacturing process control. To increase the sensitivity in the metrology using this method, it is required to optimize illumination and collection optics that enhance scatterfield signals from the nanoscale targets. Partial coherence of the optical imaging system is used not only for enhancing image quality in the traditional microscopy or lithography but also for increasing the sensitivity of the scatterfield imaging microscopy. This paper presents an empirical investigation of the effect of partial coherence on measurement sensitivity using a deep ultraviolet scatterfield imaging microscope platform that uses a 193 nm excimer laser as a source and a conjugate back focal plane as a unit for controlling partial coherence. Dimensional measurement sensitivity is assessed through analyzing scatterfield images measured at the edge area of periodic multiline structures with nominal linewidths ranging 44-80 nm on a Molybdenum Silicide (MoSi) photomask. Intensities scattered from the targets under the illuminations with various partial coherence factors and two orthogonal polarizations are assessed with respect to sensitivity coefficient. The optimization of partial coherence factor for the target dimension is discussed through the sensitivity coefficient maps.

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Spectral tunability for accuracy, robustness, and resilience

Cited by 3 publications

References 0 publications

Metrology for the next generation of semiconductor devices

Metrology for the next generation of semiconductor devices

Enhancement of overlay metrology accuracy by multi-wavelength scatterometry with rotated quadrupole illumination

Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy

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