Spectral response of ZnSe-Zn1−xCdxTe heterojunction

Abstract

The spectral response of ZnSe-Zn1−xCdxTe (0⩽x⩽1) heterojunction is described. The heterojunction is formed by vacuum evaporation of ZnSe and Zn1−xCdxTe doped with In2Te3. The spectral response of this heterojunction is discussed for two cases, illuminated from the ZnSe side and from the Zn1−xCdxTe side. The theoretical results, based upon the assumption that the carriers excited by incident light are mainly transported by drift field, are in good agreement with the experimental results. Moreover, we could obtain a high internal quantum efficiency of 0.9 over the visible light range in this heterojunction.

Electrical properties of two-source evaporated polycrystalline films

“…Ternary Cd 1−x Zn x Te is an important semiconducting material because of the tunability of its physical parameters, such as bandgap and lattice parameter, with composition x. It finds application in the fabrication of switching devices (Patel 1986), photosensing devices (Dean 1979), quantum-well structures (Svob andMarfaing 1986, Lee et al 1992) and solar cells (Chikamura et al 1982, Rohatgi et al 1988, Basol et al 1989. Thin films of Cd 1−x Zn x Te are being investigated as the upper members of efficient tandem solar cells (Chu et al 1985).…”

Characterization of Vacuum Evaporated Polycrystalline Cd0.96Zn0.04Te Thin Films by XRD, Raman Scattering and Spectroscopic Ellipsometry

“…This compound offers a great range of tunability both of its band gap from infrared to green (E g = 1.45 to 2.3 eV) and its lattice parameter (a=6.482 to 6.100 Å). Due to the tunability of its physical parameters, Cd 1-x Zn x Te finds potential applications in a variety of solid-state devices, such as, solar cells, photo detectors, switching devices and light emitting diodes (CHIKAMURA et al 1982;DEAN et al 1986;THOMAS et al 1980;PATEL 1986). Cd 1-x Zn x Te is used in optical memory devices, X-ray and gamma ray detectors (THIO et al 1996).…”