Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films

Sridharan, M.; Narayandass, Sa. K.; Mangalaraj, D.; Lee, Hee Chul

doi:10.1016/s0168-583x(02)01879-7

Cited by 6 publications

(2 citation statements)

References 47 publications

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“…For example, the intensity of Raman scattering is more than ten times that for SPC films with the same thickness and even that of bulk c-Si. This enhanced Raman scattering has been reported for a roughened semiconductor surface, Si nanocones, and Si nanotubes (Sridharan et al, 2003;Jayavel et al, 2006;Cao et al, 2006). Figure 18 shows a two-dimensional map of the OPM intensity for excimer-laser crystallized poly-Si.…”

Section: Excimer-laser Crystallizationsupporting

confidence: 67%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

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Section: Excimer-laser Crystallizationsupporting

confidence: 67%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

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“…The size of roughness that induces SERS can be from the atomic level to a few hundred nm [27]. SERS was reported also for semiconductors such as heteroepitaxial layers with 10-50 nm roughness and Si nanocones and nanowires [28][29][30]. For the Si nanostructures, a strong enhancement (∼10 3 ) of the Raman scattering was observed and explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross-section [30].…”

Section: Intensity Of the Optical Phonon Modementioning

confidence: 90%

Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

Kitahara

Ishii

Suzuki

et al. 2011

International Journal of Spectroscopy

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Raman microscopy was applied to characterize polycrystalline silicon (poly-Si) on glass substrates for application as thin-film transistors (TFTs) integrated on electronic display panels. This study examines the crystallographic defects and stress in poly-Si films grown by industrial techniques: solid phase crystallization and excimer laser crystallization (ELC). To distinguish the effects of defects and stress on the optical-phonon mode of the Si–Si bond, a semiempirical analysis was performed. The analysis was compared with defect images obtained through electron microscopy and atomic force microscopy. It was found that the Raman intensity for the ELC film is remarkably enhanced by the hillocks and ridges located around grain boundaries, which indicates that Raman spectra mainly reflect the situation around grain boundaries. A combination of the hydrogenation of films and the observation of the Si-hydrogen local-vibration mode is useful to support the analysis on the defects. Raman microscopy is also effective for detecting the plasma-induced damage suffered during device processing and characterizing the performance of Si layer in TFTs.

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Effect of N5+ ion implantation on the optical properties of an organometallic complex—Zinc cadmium thiocyanate single crystal

Pabitha

Krishna

Taki

et al. 2013

Optik

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Effect of boron ion implantation on the structural and optical properties of polycrystalline Cd0.96Zn0.04Te thin films

Cited by 6 publications

References 47 publications

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

Effect of N5+ ion implantation on the optical properties of an organometallic complex—Zinc cadmium thiocyanate single crystal

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