Spectral Response Model of Backside-Illuminated HgCdTe Detectors

D'Souza, Arvind I.; Robinson, E.; Wijewarnasuriya, P. S.; Stapelbroek, M. G.

doi:10.1007/s11664-011-1637-6

Cited by 6 publications

(3 citation statements)

References 10 publications

(5 reference statements)

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“…Detector response modeling utilizes a modified version of the spectral response model for front illuminated detectors. 6,7 In this model, the detector layers are made up to be a stack with different optical parameters n() -ik(). Modeling the detector response involves a coherent calculation of the electromagnetic wave propagation through the anti-reflection (AR) coating and the detector stack.…”

Section: Visible To Swir Eapd Spectral Response Modelingmentioning

confidence: 99%

Visible to SWIR eAPD Performance

Hipwood,

Maxey,

Zemaityte

et al. 2024

Image Sensing Technologies: Materials, Devices, Systems, and Applications XI

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A NASA Advanced Component Technology (ACT) program targeted development of electron avalanche photodiodes (eAPDs) that spanned the 500 nm to 2500 nm spectral range. This ACT task leveraged an existing eAPD that are used by astronomers and other NASA programs. However, the existing eAPD cut-on wavelength starts at 800 nm, due to the CdTe buffer layer through which photons have to traverse prior to reaching the HgCdTe absorber layer. This ACT task extended the eAPD detectors cut-on wavelength down to the visible wavelength range, which required the removal of the GaAs substrate and the CdTe buffer layer. The most challenging portion of the project was the development of a passivation layer at the illuminating surface that transmits photons between 500 nm and 2500 nm, while minimizing surface recombination velocity at the surface to maintain low dark current. The baseline was to demonstrate an eAPD with 500 nm cut-on wavelength, with a goal of extending the cut-on wavelength into UV.A critical task on the program was development of a passivation process to drive minority carriers away from the passivant/HgCdTe interface towards the gain region. Two potential passivants were investigated. Results of the experiments showed one variant gave the best results and has been chosen as the deposition method. Progress was made in the development of visible to SWIR APDs in that QE was measured to be flat across the 500 nm to 2500 nm band but was low ~ 15% for one of the arrays. Another APD array had QE as high as 28%. The contention is that etching for the two arrays was different resulting in different HgCdTe absorber thickness values. Low QE is probably because the thickness of the absorber may be approximately equal to or longer than the diffusion length. Consequently, the thinner absorber regions result in higher QE, whereas the thicker absorber region of the array result in lower QE. Gain as a function of bias was measured and gain M ranged from ~ 25 to 50 at 10 V bias exceeding the M = 10 at 10 V requirement. Improving QE in the future will be by etching further into the HgCdTe absorber. This will reduce the distance that the carriers have to diffuse to reach the junction and should increase the QE.

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Section: Visible To Swir Eapd Spectral Response Modelingmentioning

confidence: 99%

Visible to SWIR eAPD Performance

Hipwood,

Maxey,

Zemaityte

et al. 2024

Image Sensing Technologies: Materials, Devices, Systems, and Applications XI

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“…[21,22] YF 3 and ZnS double-layer and multi-layer anti-reflection coatings for HgCdTe detectors were studied by D'souza et al and Saini et al, respectively, using theories and experiments. [23] At the wavelength range of 6-14 μm, De Vita et al achieved a transmission improvement ratio of 28% by depositing a ZnS-based anti-reflection coating on a Si plate. [24] However, research on anti-reflection coatings has mostly concentrated on infrared detectors with response wavelengths of less than 14 μm, and Si-based BIB detectors with a response in the VLWIR range have received very little attention.…”

Section: Introductionmentioning

confidence: 99%

“…and Saini et al., respectively, using theories and experiments. [ 23 ] At the wavelength range of 6–14 µm, De Vita et al. achieved a transmission improvement ratio of 28% by depositing a ZnS‐based anti‐reflection coating on a Si plate.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Polarization‐Dependent Conversion Efficiency of GaAs and Si Solar Cells at Oblique Incident Angles Using Surface DLAR Coating of MgF₂/ZnSe

Mercy

Wilson

2023

Cryst. Res. Technol.

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The aim of this work is to minimize reflection losses in order to increase the efficiency of solar cells by using anti‐reflection coatings (ARCs). Despite extensive research on improving solar cell conversion efficiency at normal incidence, development at angle of incidence has received little attention. Thus, the reflectivity of single‐layer ARC (SLARC) MgF2 and ZnSe, double‐layer ARC (DLARC), MgF2/ZnSe on Si, and GaAs substrates at transverse electric (TE) and transverse magnetic (TM) modes of polarization in the visible and near‐IR regions for different angles of incidence is analyzed. The optical and electrical properties of Si and GaAs solar cells are analyzed by using the reflectance spectra of SLARC and DLARC at various angles of incidence for the TM and TE modes of polarization under the solar power spectrum (AM1.5). The achieved results due to the effect of DLARC are compared for Si and GaAs solar cells. From these analyses, it is concluded that MgF2/ZnSe is an appropriate DLARC for the range of wavelengths 400–800 nm at 10°–30° angles of incidence in TM mode for tuning the optical and electrical properties of Si and GaAs substrates for terrestrial applications.

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Design and development of four-layer anti-reflection coating stacks (ZnS and YF3 thin films) for HgCdTe-based mid-wave infrared detectors

Meena

Saini

Singh

et al. 2023

Materials Science in Semiconductor Processing

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Spectral Response Model of Backside-Illuminated HgCdTe Detectors

Cited by 6 publications

References 10 publications

Visible to SWIR eAPD Performance

Visible to SWIR eAPD Performance

Comparative Study of Polarization‐Dependent Conversion Efficiency of GaAs and Si Solar Cells at Oblique Incident Angles Using Surface DLAR Coating of MgF₂/ZnSe

Design and development of four-layer anti-reflection coating stacks (ZnS and YF3 thin films) for HgCdTe-based mid-wave infrared detectors

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Spectral Response Model of Backside-Illuminated HgCdTe Detectors

Cited by 6 publications

References 10 publications

Visible to SWIR eAPD Performance

Visible to SWIR eAPD Performance

Comparative Study of Polarization‐Dependent Conversion Efficiency of GaAs and Si Solar Cells at Oblique Incident Angles Using Surface DLAR Coating of MgF2/ZnSe

Design and development of four-layer anti-reflection coating stacks (ZnS and YF3 thin films) for HgCdTe-based mid-wave infrared detectors

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Comparative Study of Polarization‐Dependent Conversion Efficiency of GaAs and Si Solar Cells at Oblique Incident Angles Using Surface DLAR Coating of MgF₂/ZnSe