Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser

Nishimura, Y.

doi:10.1109/jqe.1973.1077406

Cited by 49 publications

(4 citation statements)

References 13 publications

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“…The energy (spectral) width contributing to the laser action is limited to within E active (an order of 5-10 meV), and is called the homogeneous linewidth. 14) With the laser action, the shallow burned hole at E active will occur, but the burned-hole depth is too small to affect the total distribution profile. 15) With increasing injection current, the flow of carriers per second to radiate photons increases, yet the number of carriers conserved in the active area is assumed to remain constant (clamping).…”

Section: Discussion: Excess Carrier Conservation Model Of Ldmentioning

confidence: 99%

Injection-Current-Induced Blue-Shift Laser Diode: Concept of Excess Carrier Conservation

Murasawa

Hidaka

Sato

2011

Jpn. J. Appl. Phys.

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We report the blue-shift characteristics of continuous-wave oscillation wavelength induced by the current injection of a GaAs-base laser diode. Typical laser diodes show red-shift characteristics owing to the band-gap narrowing induced by a rise in the temperature of the active layer upon current injection. The cause of the blue shift in the laser diode reported here is the effect of the conserved excess-carrier-induced refractive-index reduction, which is superior to the temperature-rising effect. We try to construct a new simple model to explain such blue-shift characteristics.

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Section: Discussion: Excess Carrier Conservation Model Of Ldmentioning

confidence: 99%

Injection-Current-Induced Blue-Shift Laser Diode: Concept of Excess Carrier Conservation

Murasawa

Hidaka

Sato

2011

Jpn. J. Appl. Phys.

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“…where k is the coefficient of loss of the LD. Many models have been introduced to introduce gain saturation [35][36][37]. The parameter B is the gain saturation, which is introduced by the gain third-order perturbation theory [35,36].…”

Section: Modified Model Of Analysismentioning

confidence: 99%

Dynamics of Semiconductor Laser Subject to Optical Feedback with Linewidth Enhancement Factor and Spontaneous Emission Factor

Abdulrhmann,

Hakami

2023

Applied Sciences

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In this article, the dependence of the operation states, dynamics, and noise of laser diodes (LD) with external optical feedback (OFB) on the linewidth enhancement factor (LEF) and spontaneous emission factor (SEF) have been investigated. We systematically studied the classification of the laser dynamics based on the bifurcation diagrams (BDs) of the photon numbers and the relative intensity noise (RIN) spectra at different levels of OFB, LEF, and SEF. The simulation results show that variations in the LEF and SEF lead to significant changes in the laser operation states and dynamics, which vary from continuous wave (CW), pulsation, and chaos states. The Hopf bifurcation (HB) point moves toward increasing/decreasing OFB intensity by increasing/decreasing the SEF/LEF. The laser state becomes more stable through a wide range of OFB by increasing/decreasing the SEF/LEF. The RIN reduces the solitary laser noise level at higher/lower values of SEF/LEF when the laser is operated under OFB. The relaxation frequency of the laser shifts toward higher values by increasing/decreasing the SEF/LEF through most laser states, and the RIN peak is higher than solitary laser noise by four orders of magnitude, especially in the pulsation regions. In the low-frequency region, the RIN is enhanced from one to two orders by reducing the LEF and SEF through laser states.

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“…where G is the optical gain, a is the slope of the optical gain with the changes in carrier number N, ξ is the conferment factor, V is the active region volume, N is the N timeaveraged value, α is the LEF, I is the injection current, τ s is the electron lifetime due to spontaneous emission, and N g is the carrier number at transparency. The universal constant e defines the electron charge, and B is the nonlinear gain coefficient, respectively [19][20][21].…”

Section: Time-delay Model Of Two-reflector Ofbmentioning

confidence: 99%

Dynamics of Semiconductor Laser Coupled with Two External Cavities

Abdulrhmann,

Alhasan,

Madkhli

2023

Applied Sciences

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An investigation into the dynamic states and relative intensity noise of laser diodes subjected to double optical feedback has been conducted. We employed modified and improved time-delay rate equations to account for double external optical feedback. The dynamic states and noise of lasers will be investigated using bifurcation diagrams of the output photon number, its temporal variations, and the intensity noise of the laser. This analysis considers feedback strengths due to the double external cavity and their spacing from the front facet of the laser with and without phase due to feedback. The results reveal that considering phase causes significant variations in laser intensity and a phase shift in the temporal variations of the laser output. This results in relative intensity noise suppression and a frequency shift in the intensity noise spectrum. These findings represent new contributions to our understanding of the reliance of lasing frequency shift on the phase due to feedback, regardless of whether feedback originates from a single or double external cavity. We investigated the optimal conditions corresponding to stable dynamic states of the laser with the lowest noise level. Additionally, we identified conditions that result in chaotic dynamics, where the spectrum does not convey information about the laser system. These insights have potential applications in chaotic and secure optical data encryption.

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Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser

Cited by 49 publications

References 13 publications

Injection-Current-Induced Blue-Shift Laser Diode: Concept of Excess Carrier Conservation

Injection-Current-Induced Blue-Shift Laser Diode: Concept of Excess Carrier Conservation

Dynamics of Semiconductor Laser Subject to Optical Feedback with Linewidth Enhancement Factor and Spontaneous Emission Factor

Dynamics of Semiconductor Laser Coupled with Two External Cavities

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